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Product Detailed Parameters
- Description：IGBT NPT 1200V 6.2A TO252-3
- Series：-
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- IGBT Type：NPT
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：6.2 A
- Current - Collector Pulsed (Icm)：9.6 A
- Vce(on) (Max) @ Vge, Ic：3.6V @ 15V, 2A
- Power - Max：62 W
- Switching Energy：220µJ
- Input Type：Standard
- Gate Charge：11 nC
- Td (on/off) @ 25°C：23ns/260ns
- Test Condition：800V, 2A, 91Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
- Supplier Device Package：PG-TO252-3-11
- Grade：-
- Qualification：-
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Overview
The SGD02N120BUMA1 is a fast NPT-technology IGBT with a collector-emitter voltage of 1200 V and a DC collector current of 6.2 A at 25°C. It features a maximum power dissipation of 62 W, a short-circuit withstand time of 10 µs, and an operating junction temperature range from -55°C to +150°C. The device utilizes PG-TO-252-3-11 (D-Pak) packaging.
Feature Summary
- NPT technology provides tight parameter distribution and high ruggedness for parallel switching capability.
- Offers 40% lower turn-off energy compared to previous generations.
- Qualified according to JEDEC standards for target applications.
Applications
- Motor controls
- Inverters
- Switching mode power supplies
Procurement Notes
Verify the specific suffix 'BUMA1' against official Infineon documentation to confirm exact tape-and-reel specifications or marking variations. Confirm RoHS compliance status and Pb-free lead plating requirements for your assembly process. Ensure the component meets all JEDEC qualification standards required by your design.
Selection Notes
Select this component for designs requiring robust short-circuit protection up to 10 µs and high thermal stability. Consider the D-Pak package for surface-mount applications needing efficient heat dissipation. Evaluate gate resistance values to optimize switching speed versus EMI performance within the specified safe operating area.
Part Context
This part belongs to the SGx02N120 family of fast IGBTs manufactured using NPT technology. It shares core electrical characteristics with the SGP02N120 and SGI02N120 variants, differing primarily in the physical package configuration. The family is designed for medium-power switching applications requiring high reliability.
Replacement Considerations
Direct replacements include SGP02N120 (PG-TO-220-3-1) and SGI02N120 (PG-TO-262-3-1). Verify that the alternative package fits the PCB footprint and thermal management constraints of the existing design.
FAQ
What is the short-circuit withstand time for the SGD02N120?
The device has a short-circuit withstand time of 10 µs when VGE is 15V, VCC is between 100V and 1200V, and Tj is ≤ 150°C.
Does the SGD02N120 support parallel switching?
Yes, the NPT technology ensures very tight parameter distribution and temperature-stable behavior, enabling parallel switching capability.
What is the maximum collector-emitter saturation voltage?
At Tj = 150°C and IC = 2A with VGE = 15V, the maximum VCE(sat) is 4.3 V.
