SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
SGD04N60BUMA1 is a single N-channel IGBT from Infineon Technologies, part of the TRENCHSTOP family. It features a collector-emitter breakdown voltage of 600 V and a continuous collector current of 12 A at 25°C. The device has a maximum power dissipation of 68 W and is housed in a TO-252-3 (DPAK) surface-mount package. Key electrical parameters include a collector-emitter saturation voltage of 1.5 V and a gate-emitter leakage current of 100 nA. The component operates within a temperature range of -40°C to +175°C.
Verify component authenticity through authorized channels due to obsolete status. Confirm replacement availability as manufacturing may have ceased. Check datasheet revisions for updated electrical characteristics. Ensure packaging specifications match design requirements. Validate thermal performance against application constraints before integration.
Consider the 600V rating and 12A current capacity for medium-power applications. Evaluate the TO-252-3 package for PCB space constraints. Compare switching speeds with alternative IGBTs if high-frequency operation is required. Assess thermal resistance values for heat sink design. Review gate drive requirements to ensure compatibility with control circuits.
The SGD04N60BUMA1 belongs to Infineon's TRENCHSTOP IGBT series, known for balancing efficiency and cost. This specific model targets applications requiring reliable switching in compact form factors. As an obsolete part, it represents a legacy solution in power electronics design, often replaced by newer generations with improved metrics.
IGD06N60TATMA1 is listed as a similar substitute option. Verify pinout compatibility and electrical parameter alignment before substitution. Consult official cross-reference guides for approved replacements.