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The SGF23N60UFDTU is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by onsemi. It features a maximum collector-emitter voltage of 600 V and a continuous collector current of 23 A at 25°C. The device is housed in a TO-3PF through-hole package with a maximum power dissipation of 75 W. Key electrical parameters include a gate charge of 49 nC, a saturation voltage of 2.6 V at 15 V gate drive and 12 A collector current, and switching times of 17 ns turn-on and 60 ns turn-off under test conditions of 300 V, 12 A, and 23 Ω.
Verify the specific manufacturer lot and date code upon receipt, as this component is listed as obsolete or end-of-life by onsemi. Confirm that the TO-3PF package dimensions match the target PCB footprint. Check for any lead-free compliance markings if required by local regulations, noting that older stock may vary in environmental certification status.
Select this IGBT when a 600V rating and approximately 23A continuous current are required in a TO-3PF package. Consider the 2.6V saturation voltage for thermal management calculations at 12A loads. Ensure the driving circuit can supply sufficient gate current to achieve the specified 17ns/60ns switching speeds, as performance degrades with higher source impedance.
This part belongs to the SGF23 series of ultra-fast IGBTs from onsemi (formerly Fairchild Semiconductor). It shares the core die technology with variants like SGF23N60UFTU but differs in packaging and distribution channel. The SGF23 series is engineered to balance low conduction losses with fast switching speeds, targeting medium-power industrial applications.
Direct pin-compatible replacements include the SGF23N60UFTU. Verify that substitute parts meet the same 600V/23A ratings and TO-3PF mechanical constraints. Cross-reference datasheets for switching energy values (115µJ on, 135µJ off) to ensure equivalent thermal performance in the final design.