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The SGF80N60UFTU is an Insulated Gate Bipolar Transistor (IGBT) manufactured by Fairchild Semiconductor. It features a single N-channel configuration housed in a TO-3PF package with three pins. The device supports a maximum collector-emitter voltage of 600 V and a continuous collector current of 80 A at 25°C. Key electrical parameters include a saturation voltage of 2.4 V at 40 A, a gate-emitter threshold voltage ranging from 1.5 V to 3.5 V, and a maximum gate-emitter voltage of ±20 V. The component operates within a temperature range of -55°C to +150°C junction temperature.
Verify the manufacturer origin carefully, as Fairchild's discrete semiconductor business was acquired by onsemi. Confirm RoHS compliance status, as older batches may be non-compliant while newer revisions are lead-free. Ensure the TO-3PF package variant matches the thermal requirements of the target application design.
Select this component for high-current applications requiring fast switching speeds. Compare the 2.4 V saturation voltage against alternative IGBTs to evaluate thermal management needs. Verify that the driving circuit can handle the required gate charge and voltage levels within the specified ±20 V limit for reliable operation.
This part belongs to the UF series of Insulated Gate Bipolar Transistors, which are engineered for low conduction and switching losses. The series is specifically optimized for applications demanding high-speed switching performance, such as motor control and general inverters, distinguishing it from standard slow-switching IGBTs.
Check for equivalents like the SGP80N60UFTU or FGAF80N60UFTU. Verify pinout compatibility and thermal resistance values before substitution. Ensure the replacement maintains the same 600V rating and 80A current capacity.