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Product Detailed Parameters
- Description：IGBT 1200V 24A TO-3P
- Series：-
- Mfr：Fairchild Semiconductor
- Package：Bulk
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：24 A
- Current - Collector Pulsed (Icm)：45 A
- Vce(on) (Max) @ Vge, Ic：3V @ 15V, 15A
- Power - Max：180 W
- Switching Energy：-
- Input Type：Standard
- Gate Charge：108 nC
- Td (on/off) @ 25°C：20ns/60ns
- Test Condition：600V, 15A, 20Ohm, 15V
- Reverse Recovery Time (trr)：100 ns
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-3P-3, SC-65-3
- Supplier Device Package：TO-3P
- Grade：-
- Qualification：-
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Overview
The SGH15N150RUFDTU is a short circuit rated Insulated Gate Bipolar Transistor (IGBT) from Fairchild Semiconductor's RUFD series. It integrates an IGBT with a Fast Recovery Diode (FRD) in a CO-PAK package. Key electrical parameters include a collector-emitter voltage of 1200V and a continuous collector current of 15A. The device features a low saturation voltage of 2.3V at 15A and a typical reverse recovery time of 65ns for the integrated diode. It supports a maximum junction temperature of 175°C and offers short circuit ruggedness rated for 10µs at TC = 100°C.
Feature Summary
- Short circuit ruggedness rated for 10 microseconds at a case temperature of 100°C
- Integrated Fast Recovery Diode with high speed switching characteristics
- Low saturation voltage for reduced conduction losses
- High input impedance simplifying gate drive requirements
Applications
- AC and DC motor controls
- General purpose inverters
- Uninterruptible power supplies (UPS)
- Robotics and servo controls
Procurement Notes
Verify the manufacturer source, as Fairchild Semiconductor's semiconductor division was acquired by ON Semiconductor. Confirm the specific suffix 'TU' indicates tape and reel packaging if required for automated assembly. Ensure the component meets RoHS compliance standards relevant to the target market. Check for obsolescence status given the acquisition timeline.
Selection Notes
Select this component for applications requiring high voltage blocking capability and robust short circuit protection. The integrated FRD eliminates the need for external anti-parallel diodes, reducing board space. Compare the 15A current rating against load requirements to ensure adequate thermal headroom. Consider the CO-PAK package for its superior thermal performance compared to standard TO-220 packages.
Part Context
This part belongs to the SGH/RUFD family of short-circuit rated IGBTs designed for high-reliability power conversion. The RUFD series specifically targets applications where fault tolerance is critical. The integration of the FRD distinguishes it from standard IGBTs that require external freewheeling diodes. This configuration is common in industrial drives and power supply designs.
Replacement Considerations
Direct substitutes within the same series include SGH10N120RUFDTU and SGH15N120RUFDTU. Cross-reference with ON Semiconductor datasheets following the corporate acquisition. Verify pinout compatibility and thermal resistance values when replacing with equivalent parts from other manufacturers.
