SGH30N60RUFTU

$3.37

Description：IGBT 600V 48A TO-3PN
Series：-

SKU:1f202b1e078c Category: Single IGBTs Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：IGBT 600V 48A TO-3PN
Series：-
Mfr：onsemi
Package：Tube
IGBT Type：-
Voltage - Collector Emitter Breakdown (Max)：600 V
Current - Collector (Ic) (Max)：48 A
Current - Collector Pulsed (Icm)：90 A
Vce(on) (Max) @ Vge, Ic：2.8V @ 15V, 30A
Power - Max：235 W
Switching Energy：919µJ (on), 814µJ (off)
Input Type：Standard
Gate Charge：85 nC
Td (on/off) @ 25°C：30ns/54ns
Test Condition：300V, 30A, 7Ohm, 15V
Reverse Recovery Time (trr)：-
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-3P-3, SC-65-3
Supplier Device Package：TO-3PN
Grade：-
Qualification：-

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SGH30N60RUFTU

Overview

The SGH30N60RUFTU is a short circuit rated Insulated Gate Bipolar Transistor (IGBT) from the RUF series, manufactured by onsemi. It features a TO-3P-3 package with through-hole mounting. Key electrical parameters include a collector-emitter voltage of 600 V and a continuous collector current of 48 A at 25°C case temperature. The device exhibits a saturation voltage of 2.2 V at 30 A and 2.5 V at 48 A when driven at 15 V gate-emitter voltage. Maximum power dissipation is 235 W at 25°C and 90 W at 100°C. It withstands short circuits for 10 µs at 100°C case temperature and operates within a junction temperature range of -55°C to +150°C.

Feature Summary

Short circuit ruggedness rated for 10 microseconds at 100°C case temperature
Low saturation voltage characteristics for efficient conduction
High speed switching capability suitable for high frequency operation

Applications

AC and DC motor controls
General purpose inverters
Uninterrupted power supplies (UPS)
Robotics and servo controls

Procurement Notes

Verify component authenticity and datasheet revision status before integration. Confirm that the TO-3P-3 package dimensions match the design layout requirements. Ensure thermal management solutions accommodate the specified junction-to-case thermal resistance values under expected operating conditions.

Selection Notes

Select this component for applications requiring robust short circuit protection alongside low conduction losses. Evaluate the thermal performance against the maximum power dissipation limits at the intended case temperature. Consider the gate drive voltage requirements to ensure optimal saturation voltage and switching performance.

Part Context

This IGBT belongs to the SGH30N60RUFDTU product family. It is part of the RUF series designed for general inverter and motor control applications where short circuit ruggedness is critical. The device utilizes silicon technology and is housed in a standard TO-3P package.