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Product Detailed Parameters
- Description：IGBT 600V 160A TO-264-3
- Series：-
- Mfr：onsemi
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：160 A
- Current - Collector Pulsed (Icm)：300 A
- Vce(on) (Max) @ Vge, Ic：2.6V @ 15V, 80A
- Power - Max：250 W
- Switching Energy：2.5mJ (on), 1.76mJ (off)
- Input Type：Standard
- Gate Charge：345 nC
- Td (on/off) @ 25°C：40ns/90ns
- Test Condition：300V, 80A, 3.9Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-264-3, TO-264AA
- Supplier Device Package：TO-264-3
- Grade：-
- Qualification：-
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Overview
The SGL160N60UFTU is an N-channel Ultra-Fast Insulated Gate Bipolar Transistor (IGBT) manufactured by onsemi, originally developed under the Fairchild Semiconductor brand. It features a TO-264 package designed for high-speed switching applications requiring low conduction and switching losses. The device supports a collector-emitter voltage of 600 V and a continuous collector current of 160 A at 25°C case temperature. Key electrical parameters include a saturation voltage of 2.1 V at 80 A and a maximum power dissipation of 250 W at 25°C.
Feature Summary
- High speed switching capability
- Low saturation voltage
- High input impedance
Applications
- AC & DC motor controls
- General purpose inverters
- Robotics
- Servo controls
- Power supplies
Procurement Notes
Verify component authenticity through authorized distributors or official manufacturer channels. Confirm datasheet revision status and original branding history, as the product was initially released by Fairchild Semiconductor before corporate transitions. Ensure compliance with RoHS directives and verify lead soldering temperature limits during assembly to prevent thermal damage.
Selection Notes
Select this component for circuits requiring fast turn-off characteristics and efficient power handling in medium-to-high current environments. Evaluate thermal management requirements carefully, as the junction-to-case thermal resistance is 0.5 °C/W. Ensure gate drive voltages remain within the ±20 V limit and monitor operating temperatures to stay within the -55 to +150 °C junction range.
Part Context
This IGBT belongs to the UF series, which is engineered specifically for applications demanding rapid switching speeds alongside low energy loss. The TO-264 package provides robust mechanical stability and effective heat dissipation capabilities suitable for industrial power electronics. It serves as a discrete solution for replacing integrated modules in specific inverter topologies.
Replacement Considerations
Direct substitutes may include other 600V 160A IGBTs in TO-264 packages from various manufacturers. Verify pinout compatibility, saturation voltage curves, and switching times against the original specifications to ensure circuit performance remains unaffected during replacement.
