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The SGP15N60RUFTU is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by Fairchild Semiconductor. It features a maximum collector-emitter voltage of 600V and a continuous collector current rating of 31A at 25°C. The device utilizes a TO-220AB package with three terminals. Key electrical parameters include a maximum gate-emitter voltage of ±20V, a maximum fall time of 315ns, and a maximum gate threshold voltage of 5V. The component supports operation up to a maximum junction temperature of 150°C.
Verify the specific manufacturer source, as this part number may be associated with ON Semiconductor following industry consolidation. Confirm RoHS compliance status and lead times through authorized distributors. Ensure the ordering suffix matches the required packaging format. Cross-reference datasheets from both Fairchild and ON Semiconductor to confirm parameter consistency before procurement.
Select this IGBT for applications requiring high-speed switching and short-circuit protection in 600V systems. Compare the 31A current rating and 315ns fall time against system requirements. Evaluate thermal management needs given the TO-220AB package and 150°C maximum operating temperature. Consider paralleling capabilities if higher current handling is necessary.
This component belongs to the RUF series of Insulated Gate Bipolar Transistors designed for robust performance in demanding power electronics environments. The series emphasizes low conduction losses combined with high-speed switching. It serves as a discrete solution for medium-power inversion and motor drive circuits where reliability under fault conditions is critical.
Equivalent parts include the SGH30N60RUFTU for higher current capacity or the SGP23N60UFTU for similar performance profiles. Verify pinout compatibility and thermal resistance values when substituting. Check for updated datasheets from ON Semiconductor if sourcing from current inventory.