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Product Detailed Parameters
- Description：IGBT 600V 23A TO-220-3
- Series：-
- Mfr：onsemi
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：23 A
- Current - Collector Pulsed (Icm)：92 A
- Vce(on) (Max) @ Vge, Ic：2.6V @ 15V, 12A
- Power - Max：100 W
- Switching Energy：115µJ (on), 135µJ (off)
- Input Type：Standard
- Gate Charge：-
- Td (on/off) @ 25°C：17ns/60ns
- Test Condition：300V, 12A, 23Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-220-3
- Supplier Device Package：TO-220-3
- Grade：-
- Qualification：-
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Overview
The SGP23N60UFTU is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by onsemi. It utilizes silicon technology and is housed in a TO-220-3 through-hole package. The device supports a maximum collector-emitter voltage of 600 V and a continuous collector current of 23 A at 25°C. Key electrical parameters include a saturation voltage of 2.1 V, a gate-emitter voltage range of -20 V to 20 V, and a power dissipation rating of 100 W. The component operates within a temperature range of -55°C to +150°C.
Feature Summary
- High-speed switching capability designed for efficient operation in inverter circuits
- Low saturation voltage to minimize conduction losses during high-current flow
- Robust thermal performance suitable for demanding industrial environments
Applications
- AC and DC motor control systems
- General purpose inverters
- Robotics and servo controls
Procurement Notes
This component is officially listed as End-of-Life (EOL) by the manufacturer. Verification of availability should focus on secondary market distributors or surplus suppliers rather than direct factory channels. Buyers must confirm the authenticity of the source and check for relevant compliance documentation such as REACH status before acquisition.
Selection Notes
Engineers selecting this IGBT should verify that the required current handling meets the 23 A continuous limit and that the system voltage does not exceed 600 V. The TO-220-3 package requires appropriate heatsinking to manage the 100 W power dissipation. Designers must ensure gate drive signals remain within the specified ±20 V limits to prevent device damage.
Part Context
The SGP23N60UFTU belongs to the SGP23N60UF series of ultra-fast IGBTs from onsemi. This series was developed to provide low conduction and switching losses for applications requiring high-speed performance. The part represents a specific configuration within the broader portfolio of power transistors offered by the manufacturer for industrial power conversion.
Replacement Considerations
Potential substitutes include the SGF23N60UFTU and SGF23N60UFDTU, which share similar 600V/23A specifications but may differ in packaging such as TO-3PF. Cross-referencing datasheets for pinout compatibility and thermal characteristics is essential when evaluating these alternatives.
