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Product Detailed Parameters
- Description：IGBT TRENCH 400V TO-252AA
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR)
- IGBT Type：Trench
- Voltage - Collector Emitter Breakdown (Max)：400 V
- Current - Collector (Ic) (Max)：-
- Current - Collector Pulsed (Icm)：130 A
- Vce(on) (Max) @ Vge, Ic：8V @ 4.5V, 130A
- Power - Max：45 W
- Switching Energy：-
- Input Type：Standard
- Gate Charge：-
- Td (on/off) @ 25°C：-
- Test Condition：-
- Reverse Recovery Time (trr)：-
- Operating Temperature：-40°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
- Supplier Device Package：TO-252AA
- Grade：-
- Qualification：-
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Overview
The SGR15N40LTF is an Insulated Gate Bipolar Transistor (IGBT) featuring a trench gate structure for superior conduction and switching performance. It offers a collector-emitter voltage of 400V, a pulsed collector current of 130A, and a maximum power dissipation of 45W at 25°C case temperature. The device operates within a junction temperature range of -40 to +150°C. Key electrical parameters include a breakdown voltage of 450V, a saturation voltage of up to 8.0V at 130A, and turn-off fall time of 2.0µs. Thermal resistance from junction to case is 3.0°C/W.
Feature Summary
- Trench gate structure provides high input impedance and wide noise immunity
- Capable of handling high peak currents up to 130A
- Designed for easy gate drive requirements
Applications
- Strobe flash circuits
Procurement Notes
Verify the manufacturer origin as Fairchild Semiconductor or onsemi, noting that onsemi acquired Fairchild's discrete semiconductor business. Confirm the datasheet revision matches Rev. A1 specifications. Ensure the component is sourced from authorized distributors to avoid counterfeit parts, especially given the product's age and potential obsolescence status in some channels.
Selection Notes
Select this component for applications requiring robust strobe driving capabilities with high peak current demands. The 400V rating suits moderate voltage systems. Consider the thermal resistance values when designing heat sinks, particularly for PCB-mounted D-PAK configurations where junction-to-ambient resistance is significantly higher than junction-to-case.
Part Context
This IGBT belongs to the SGR/SGU series from Fairchild Semiconductor, characterized by trench gate technology. The 'TF' suffix typically denotes a tape-and-reel packaging option for surface-mount assembly. The device is part of a family designed to replace planar gate transistors in applications needing improved efficiency and switching speed.
Replacement Considerations
Check for direct equivalents like the SGU15N40L which shares identical electrical characteristics but may differ in pinout or specific package tolerances. Verify compatibility with existing gate drive circuits due to similar threshold voltages and capacitance values.
