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Product Detailed Parameters
- Description：IGBT 600V 16A TO-220F-3
- Series：-
- Mfr：onsemi
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：16 A
- Current - Collector Pulsed (Icm)：30 A
- Vce(on) (Max) @ Vge, Ic：2.8V @ 15V, 10A
- Power - Max：55 W
- Switching Energy：141µJ (on), 215µJ (off)
- Input Type：Standard
- Gate Charge：30 nC
- Td (on/off) @ 25°C：15ns/36ns
- Test Condition：300V, 10A, 20Ohm, 15V
- Reverse Recovery Time (trr)：60 ns
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-220-3 Full Pack
- Supplier Device Package：TO-220F-3
- Grade：-
- Qualification：-
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Overview
The SGS10N60RUFDTU is a short circuit rated Insulated Gate Bipolar Transistor (IGBT) manufactured by onsemi. It features a TO-3P-3 package and operates with a maximum collector-emitter voltage of 600 V. The device supports a continuous collector current of 10 A at 25°C, with a saturation voltage of 2.2 V at 10 A. It dissipates up to 75 W of power and functions within a temperature range of -55°C to +150°C.
Feature Summary
- Short circuit ruggedness rated for 10 microseconds at a case temperature of 100°C and gate-emitter voltage of 15V
- Integrated fast recovery diode with a typical reverse recovery time of 42 nanoseconds
- High-speed switching capability combined with low conduction losses
Applications
- AC and DC motor controls
- General purpose inverters
- Uninterruptible power supplies (UPS)
- Robotics systems
- Servo controls
Procurement Notes
Verify component authenticity through authorized channels due to potential availability constraints. Confirm RoHS compliance status via official documentation before integration. Ensure thermal management aligns with the specified operating temperature limits. Validate pinout compatibility with existing TO-3P-3 footprints during design finalization.
Selection Notes
Select this IGBT for designs requiring inherent short circuit protection without external sensing circuits. The integrated FRD simplifies topology by eliminating discrete freewheeling diodes. Consider the 600V rating for medium-voltage industrial applications. Evaluate thermal resistance requirements against the 75W dissipation limit for reliable operation.
Part Context
This component belongs to the RUFD series of IGBTs from onsemi, formerly Fairchild Semiconductor. The series is engineered for high reliability in power conversion systems. It combines N-channel IGBT technology with a monolithic fast recovery diode to optimize performance in inductive load switching scenarios.
Replacement Considerations
Direct substitutes include SGS10N60RUF and SGH10N60RUF. Verify electrical parameters and pinout compatibility before substitution. Cross-reference datasheets to ensure equivalent short circuit ratings and thermal characteristics match the original design requirements.
