SGS13N60UFDTU

SGS13N60UFDTU

$0.47
  • Description:IGBT 600V 13A TO-220F-3
  • Series:-

SKU:46a40d49d496 Category: Brand:

  
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Product Detailed Parameters

  • Description:IGBT 600V 13A TO-220F-3
  • Series:-
  • Mfr:Fairchild Semiconductor
  • Package:Tube
  • IGBT Type:-
  • Voltage - Collector Emitter Breakdown (Max):600 V
  • Current - Collector (Ic) (Max):13 A
  • Current - Collector Pulsed (Icm):52 A
  • Vce(on) (Max) @ Vge, Ic:2.6V @ 15V, 6.5A
  • Power - Max:45 W
  • Switching Energy:85µJ (on), 95µJ (off)
  • Input Type:Standard
  • Gate Charge:25 nC
  • Td (on/off) @ 25°C:20ns/70ns
  • Test Condition:300V, 6.5A, 50Ohm, 15V
  • Reverse Recovery Time (trr):55 ns
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-220-3 Full Pack
  • Supplier Device Package:TO-220F-3
  • Grade:-
  • Qualification:-

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SGS13N60UFDTU

Overview

The SGS13N60UFDTU is an N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by Fairchild Semiconductor. It features a maximum collector-emitter voltage of 600 V and a continuous collector current rating of 13 A at case temperature. The device utilizes ultra-fast technology to minimize switching losses, with a typical saturation voltage of 2.4 V at 13 A. It is housed in a TO-247AB package designed for high-power applications requiring efficient thermal management and robust performance under high-speed switching conditions.

Feature Summary

  • Ultra-fast switching capability reduces energy loss during transitions
  • Low saturation voltage enhances conduction efficiency
  • High input impedance simplifies gate drive requirements

Applications

  • AC and DC motor control systems
  • General purpose inverters
  • Robotics and servo controls

Procurement Notes

Verify the manufacturer origin as Fairchild Semiconductor or its successor entity, ON Semiconductor, due to corporate acquisitions. Confirm the specific suffix 'DTU' corresponds to the TO-247AB flange mount package. Check for RoHS compliance status as legacy Fairchild parts may vary. Ensure the component matches the exact pinout and electrical specifications required for the target circuit design before procurement.

Selection Notes

Select this IGBT for applications demanding high voltage blocking and moderate current handling up to 13 A. The ultra-fast characteristic makes it suitable for higher frequency switching compared to standard IGBTs. Consider the thermal resistance of the TO-247AB package when designing heat sinks. Verify that the gate drive voltage aligns with the specified threshold and maximum ratings to ensure reliable operation without exceeding limits.

Part Context

This component belongs to the UF series of Insulated Gate Bipolar Transistors from Fairchild Semiconductor. The series is engineered for low conduction and switching losses, targeting high-speed switching applications. It shares technological similarities with other models like SGP6N60UFTU and SGF23N60UFDTU within the same product family, offering consistent performance characteristics for power conversion tasks.

Replacement Considerations

Potential substitutes include FGH60N60UFDTU for higher current needs or SGF23N60UFDTU for similar current ratings in different packages. Verify pin compatibility and electrical parameters such as Vce(sat) and switching times before substitution. Consult official datasheets for both original and replacement parts to ensure functional equivalence.

SGS13N60UFDTUSGS13N60UFDTU
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