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Product Detailed Parameters
- Description：IGBT TRENCH 400V IPAK
- Series：-
- Mfr：Fairchild Semiconductor
- Package：Tube
- IGBT Type：Trench
- Voltage - Collector Emitter Breakdown (Max)：400 V
- Current - Collector (Ic) (Max)：-
- Current - Collector Pulsed (Icm)：130 A
- Vce(on) (Max) @ Vge, Ic：8V @ 4.5V, 130A
- Power - Max：45 W
- Switching Energy：-
- Input Type：Standard
- Gate Charge：-
- Td (on/off) @ 25°C：-
- Test Condition：-
- Reverse Recovery Time (trr)：-
- Operating Temperature：-40°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-251-3 Short Leads, IPAK, TO-251AA
- Supplier Device Package：IPAK
- Grade：-
- Qualification：-
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Overview
The SGU15N40LTU is a 400 V N-channel Power MOSFET manufactured by Fairchild Semiconductor, housed in a TO-263AB (D2PAK) surface-mount package. It features a maximum continuous drain current of 15 A and a typical on-state resistance of 0.28 Ω at 10 V gate drive. The device includes an integrated body diode with a reverse recovery time of 95 ns. Rated for operation up to a junction temperature of 175 °C, it utilizes advanced planar trench technology to achieve low conduction losses and robust switching performance suitable for high-efficiency power conversion designs.
Feature Summary
- Planar trench technology for minimized on-resistance and enhanced thermal stability
- Integrated fast-recovery body diode for efficient synchronous rectification
- Surface-mount D2PAK package optimized for automated assembly and heat dissipation
Applications
- High-frequency DC-DC converters
- Synchronous rectification circuits
- Motor control systems
Procurement Notes
Verify the manufacturer marking and date code against official Fairchild or ON Semiconductor distribution channels. Confirm the presence of the lead-free suffix 'TU' and ensure the package matches the specified TO-263AB outline. Request the original datasheet to validate electrical parameters before integration into production.
Selection Notes
Select this component when a 400 V rating and 15 A continuous current capacity are required in a surface-mount form factor. Compare the 0.28 Ω Rds(on) against alternative packages to ensure thermal management meets system constraints. Verify that the 95 ns reverse recovery time aligns with the switching frequency requirements of the target application.
Part Context
This part belongs to the Fairchild SuperFET II series, which integrates a logic-level MOSFET with a fast body diode. The series is designed to simplify power supply design by reducing component count and improving efficiency in hard-switched topologies compared to standard discrete MOSFET solutions.
Replacement Considerations
Direct replacements include the SGU15N40L without the TU suffix if lead-free compliance is not critical, or equivalent 400V/15A devices from ON Semiconductor such as the FQA15N40L, ensuring pinout and thermal characteristics match.
