SGW10N60RUFDTM

Overview

The SGW10N60RUFDTM is a short circuit rated Insulated Gate Bipolar Transistor (IGBT) with an integrated Fast Recovery Diode (FRD), manufactured by onsemi under the Fairchild RUFD series. It features a D2-PAK surface-mount package and offers low conduction and switching losses. Key electrical parameters include a collector-emitter voltage of 600 V, a continuous collector current of 16 A at 25°C case temperature, and a saturation voltage of 2.2 V at 10 A. The device supports a maximum power dissipation of 75 W at 25°C and withstands short circuits for 10 µs at 100°C. The integrated diode exhibits a typical reverse recovery time of 42 ns.

Feature Summary

• Short circuit ruggedness rated for 10 microseconds at 100°C case temperature
• Integrated CO-PAK IGBT with Fast Recovery Diode featuring low reverse recovery time
• High speed switching capability combined with low saturation voltage

Applications

• AC & DC motor controls
• General purpose inverters
• Uninterrupted power supplies (UPS)
• Robotics and servo controls

Procurement Notes

Verify component authenticity through authorized distribution channels due to potential availability from multiple historical manufacturers including Fairchild Semiconductor. Confirm RoHS compliance status as original documentation indicates non-compliance for certain variants. Ensure thermal management design accounts for the specified junction-to-case thermal resistance values during operation.

Selection Notes

Select this component for applications requiring high short-circuit tolerance and fast switching speeds in medium-power inverter topologies. Evaluate thermal performance against the 75 W maximum power dissipation limit at 25°C case temperature. Consider the 600 V breakdown voltage rating relative to system bus voltages and ensure gate drive signals remain within the ±20 V absolute maximum rating.

Part Context

This device belongs to the SGW10N60RUFD series, originally developed by Fairchild Semiconductor and later acquired by onsemi. The part integrates an N-channel IGBT with a complementary Fast Recovery Diode in a single D2-PAK package. It is designed to replace discrete IGBT and diode combinations in space-constrained designs requiring robust fault handling capabilities.

Replacement Considerations

Direct substitutes include the SGP10N60RUFDTU and SGW10N60RUF. Verify pinout compatibility and thermal characteristics when replacing with equivalent parts from other manufacturers such as STMicroelectronics or Infineon.