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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 8A 8SOP
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：8A (Ta)
- Rds On (Max) @ Id, Vgs：28mOhm @ 8A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：8nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：330pF @ 15V
- Power - Max：2W (Ta)
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOP
- Grade：-
- Qualification：-
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Overview
The SH8KA2TB1 is a dual N-channel power MOSFET from Rohm Semiconductor, designed for switching and motor drive applications. It features an SOP8 surface-mount package with eight terminals. Key electrical parameters include a drain-source voltage (V_DSS) of 30V and a continuous drain current (I_D) of 8.0A. The typical on-resistance (R_DS(on)) is 0.023Ω at V_GS=10V and 0.034Ω at V_GS=4.5V. The device has a total gate charge (Q_g) of 4.1nC and a power dissipation (P_D) of 2.8W. It operates within a storage temperature range of -55°C to 150°C and complies with RoHS standards.
Feature Summary
- Low on-resistance for efficient power handling
- Compact SOP8 surface mount package
- Lead-free plating compliant with RoHS directives
Applications
- Motor drives
- Switching circuits
Procurement Notes
Verify the ordering part number SH8KA2TB1 against official Rohm documentation to ensure correct package and tape configuration. Confirm supply status as recommended for new designs. Check RoHS compliance and lead-free plating requirements specific to the manufacturing batch. Ensure storage conditions remain within the specified -55°C to 150°C range prior to assembly.
Selection Notes
Select this component for applications requiring a dual N-channel configuration in a small SOP8 footprint. Consider the 30V V_DSS and 8.0A I_D ratings against circuit demands. Evaluate R_DS(on) values at relevant gate voltages (4.5V or 10V) for thermal management. Compare Q_g of 4.1nC for switching speed requirements relative to driver capabilities.
Part Context
The SH8KA2TB1 belongs to the SH8KA series of dual N-channel power MOSFETs. It serves as a replacement for obsolete parts like the SH8K10S, offering similar packaging but different internal configurations. The series is positioned for standard-grade industrial applications, excluding automotive use. It shares design resources and quality data protocols with other components in the SH8K family.
Replacement Considerations
The SH8KA2TB1 is listed as a direct replacement for the obsolete SH8K10S, maintaining the same SOP8 package and terminal count. Verify polarity differences, as SH8K10S includes an SBD while SH8KA2TB1 is purely N+N channel. Check current and resistance specifications to ensure compatibility with existing circuit designs.
