ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET 2N-CH 60V 6.5A 8SOP
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：60V
- Current - Continuous Drain (Id) @ 25°C：6.5A (Ta)
- Rds On (Max) @ Id, Vgs：32mOhm @ 6.5A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：7.6nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：460pF @ 30V
- Power - Max：2W (Ta)
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOP
- Grade：-
- Qualification：-
Download product information
Overview
The SH8KC6TB1 is a dual N-channel power MOSFET from Rohm Semiconductor, housed in an SOP8 surface-mount package. It features a drain-source voltage (V_DSS) of 60V and a continuous drain current (I_D) of 6.5A. The device exhibits low on-resistance, with typical values of 0.033Ω at V_GS = 4.5V and 0.025Ω at V_GS = 10V. Total gate charge (Q_g) is typically 3.9nC, supporting efficient switching. Power dissipation (P_D) is rated at 2W. The component operates within a storage temperature range of -55°C to 150°C and complies with RoHS standards.
Feature Summary
- Dual N-channel configuration integrated into a compact SOP8 surface-mount package for space-constrained designs.
- Low on-resistance characteristics optimized for high-efficiency switching applications.
- Lead-free plating compliant with RoHS directives and halogen-free composition.
Applications
- General-purpose switching circuits
- DC/DC converter modules
Procurement Notes
Verify the ordering part number SH8KC6TB1 against official Rohm documentation to ensure correct package code SOP8 and taping packaging format. Confirm supply status as recommended for new designs and check RoHS compliance requirements specific to the target application environment before finalizing procurement specifications.
Selection Notes
Select this component for applications requiring a 60V dual N-channel MOSFET with moderate current handling capabilities. Ensure the drive voltage aligns with the specified R_DS(on) performance thresholds. Consider the SOP8 package dimensions and thermal dissipation limits when designing the PCB layout for optimal heat management.
Part Context
The SH8KC6TB1 belongs to Rohm's standard-grade power MOSFET lineup, designed for general electronic equipment rather than automotive use. It serves as a cost-effective solution for low-power switching tasks where small form factor and reliable performance are prioritized over high-voltage or high-current extremes found in other series.
Replacement Considerations
Publicly confirmed substitute part numbers for SH8KC6TB1 were not identified in the provided source material. Verify compatibility with alternative components by matching key electrical parameters such as V_DSS, I_D, and package type through official manufacturer cross-reference tools.
