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Product Detailed Parameters
- Description：MOSFET N/P-CH 30V 3.5A 8SOP
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：3.5A
- Rds On (Max) @ Id, Vgs：83mOhm @ 3.5A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：3.5nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds：140pF @ 10V
- Power - Max：2W
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOP
- Grade：-
- Qualification：-
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Overview
The SH8M2TB1 is a complementary power MOSFET manufactured by ROHM Semiconductor, featuring an N-channel and P-channel pair in a single SOP-8 package. Designed for low on-resistance via micro-processing technology, it supports a drain-source voltage of 30V with continuous drain currents of 6.0A for the N-channel and 7.0A for the P-channel. Typical Rds(on) values are 0.033Ω at 4V drive for the N-channel and unspecified for the P-channel in available data. The device operates within a storage temperature range of -55°C to 150°C and dissipates up to 3.1W. It is supplied in tape and reel packaging with a unit quantity of 2500.
Feature Summary
- Complementary N+P channel configuration in a compact surface-mount package
- Low on-resistance achieved through micro-processing technology
- Optimized for 4V drive voltage applications
Applications
- Motor driver circuits
- DC-DC converter output stages
- General-purpose switching applications
Procurement Notes
Verify current supply status as the base part number SH8M2 may be marked not recommended for new designs. Confirm that the specific suffix TB1 indicates tape and reel packaging compatible with automated assembly processes. Check RoHS compliance documentation for environmental standards adherence before finalizing procurement orders.
Selection Notes
Select this component when a matched N-P pair is required for half-bridge or synchronous rectifier topologies. Ensure the 30V Vdss rating exceeds the maximum circuit voltage. Verify that the 4V drive capability aligns with the controller logic levels. Consider the SOP-8 thermal performance for the expected power dissipation in the target application environment.
Part Context
This part belongs to ROHM's SH8 series of complementary MOSFETs, which are engineered for high efficiency in motor drives and power supplies. The series utilizes advanced micro-processing techniques to minimize conduction losses while maintaining a small footprint suitable for space-constrained electronic designs.
Replacement Considerations
The SH8MA3 is listed as a similar level replacement with the same SOP-8 package. Verify pinout compatibility and electrical parameter equivalence, particularly the P-channel current rating which differs between the two parts.
