SI03N06-TP

Single FETs, MOSFETs Overview

The SI03N06-TP is a single N-channel enhancement mode MOSFET manufactured by Micro Commercial Components (MCC). It utilizes Trench Power LV technology and is housed in an SOT-23 package. The device supports a drain-source voltage of 60 V and a continuous drain current of 3 A, with a pulsed drain current rating of 12 A. Key electrical parameters include a maximum on-resistance of 95 mΩ at VGS=4.5V and ID=2A, and a gate threshold voltage ranging from 0.9 V to 2.0 V. The component operates within a junction temperature range of -55°C to +150°C and features a thermal resistance of 105°C/W.

Single FETs, MOSFETs Feature Summary

• Utilizes Trench Power LV MOSFET technology for high-speed switching performance.
• Compliant with RoHS standards and designated as a Halogen-free 'Green' device.
• Epoxy material meets UL 94 V-0 flammability ratings.
• Moisture Sensitivity Level 1 classification.

Single FETs, MOSFETs Applications

• Power management circuits
• Load switch applications
• DC-DC converter designs

Single FETs, MOSFETs Procurement Notes

Verify the authenticity of the SI03N06-TP by purchasing exclusively from Micro Commercial Components or their authorized distributors. Counterfeit components pose significant risks; ensure traceability and adherence to MCC quality standards for handling and storage. Confirm that the ordering suffix '-TP' corresponds to the Tape & Reel packaging format containing 3000 pieces per reel.

Single FETs, MOSFETs Selection Notes

Select the SI03N06-TP when a compact SOT-23 footprint is required for low-voltage switching tasks. The device offers a balance of 60 V breakdown capability and 3 A continuous current handling. Consider the specific RDS(on) limits under varying gate voltages and temperatures to ensure compatibility with the driving circuitry and thermal constraints of the target application.

Single FETs, MOSFETs Part Context

The SI03N06-TP belongs to the discrete semiconductor category, specifically within the MOSFET product line produced by Micro Commercial Components. It is designed as a general-purpose switching component leveraging trench technology to optimize performance metrics such as switching speed and conduction losses within a standard surface-mount package.

Single FETs, MOSFETs Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Cross-referencing requires matching technical specifications including voltage, current, package type, and pinout configuration.

Single FETs, MOSFETs FAQ

What is the maximum pulsed drain current for the SI03N06?

The maximum pulsed drain current (IDM) is rated at 12 A, subject to repetitive rating limitations and pulse width restrictions based on maximum junction temperature.

Does the SI03N06 support bidirectional current flow?

Yes, the device includes a continuous body diode capable of conducting up to 3 A, with a forward voltage of 1.2 V at IS=3 A.

How is the RoHS compliance indicated for this component?

The 'P' suffix designates RoHS compliance. The specific part number SI03N06-TP indicates it is supplied in Tape & Reel packaging and adheres to these environmental standards.