SI1013X-T1-GE3

$0.59

Description：MOSFET P-CH 20V 350MA SC89-3
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:3c31cdf9fd7d Category: Single FETs, MOSFETs Brand: Vishay Siliconix

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

SI1013X-T1-GE3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET P-CH 20V 350MA SC89-3. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for SI1013X-T1-GE3

Description：MOSFET P-CH 20V 350MA SC89-3
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：20 V
Current - Continuous Drain (Id) @ 25°C：350mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
Rds On (Max) @ Id, Vgs：1.2Ohm @ 350mA, 4.5V
Vgs(th) (Max) @ Id：450mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs：1.5 nC @ 4.5 V
Vgs (Max)：±6V
Input Capacitance (Ciss) (Max) @ Vds：-
FET Feature：-
Power Dissipation (Max)：250mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SC-89-3
Package / Case：SC-89, SOT-490

Single FETs, MOSFETs datasheet and documents for SI1013X-T1-GE3

SI1013X-T1-GE3

Single FETs, MOSFETs Overview

The Vishay Siliconix SI1013X-T1-GE3 is a P-channel enhancement mode MOSFET utilizing TrenchFET technology. It features a drain-source voltage of -20 V and operates with gate-source voltages as low as 1.8 V. The device offers an on-resistance of 1.2 Ω at VGS = -4.5 V, supporting a continuous drain current of -350 mA. Packaged in the SC-89 (SOT-490) surface-mount format, it provides high-side switching capabilities with fast switching speeds and robust ESD protection.

Single FETs, MOSFETs Feature Summary

TrenchFET power MOSFET technology for optimized performance
Capable of operation with gate-source voltages down to 1.8 V
High-side switching configuration suitable for low-voltage applications
Halogen-free construction compliant with IEC 61249-2-21 standards

Single FETs, MOSFETs Applications

Drivers for relays, solenoids, lamps, hammers, displays, and memories
Battery-operated systems requiring low battery voltage operation
Power supply converter circuits
Load and power switching in cell phones and pagers

Single FETs, MOSFETs Procurement Notes

Verify the specific package variant during procurement, as the Si1013R/T1/GE3 family includes both SC-75A and SC-89 options. Confirm RoHS compliance and halogen-free status against current manufacturing specifications. Ensure design validation accounts for thermal dissipation limits within the SC-89 footprint. Cross-reference marking codes to distinguish between package types accurately.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring single-supply logic-level driving or ultra-low voltage operation near 1.8 V. The SC-89 package suits space-constrained PCB layouts. Evaluate thermal management requirements based on the maximum power dissipation ratings. Consider the low threshold voltage characteristics for efficient control in battery-powered portable electronics.

Single FETs, MOSFETs Part Context

This part belongs to the Si1013R/X series of P-channel MOSFETs from Vishay Siliconix. It shares core electrical characteristics with the Si1013R variant but utilizes the SC-89 (SOT-490) package instead of the SC-75A (SOT-416). Both variants are lead-free and halogen-free, designed for compact surface-mount applications.