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SI1416EDH-T1-BE3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET N-CH 30V 3.9A/3.9A SC70-6. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for SI1416EDH-T1-BE3
- Description：MOSFET N-CH 30V 3.9A/3.9A SC70-6
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：3.9A (Ta), 3.9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：58mOhm @ 3.1A, 10V
- Vgs(th) (Max) @ Id：1.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：12 nC @ 10 V
- Vgs (Max)：±12V
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：1.56W (Ta), 2.8W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SC-70-6
- Package / Case：6-TSSOP, SC-88, SOT-363
Single FETs, MOSFETs datasheet and documents for SI1416EDH-T1-BE3
Single FETs, MOSFETs Overview
The Vishay Siliconix SI1416EDH-T1-BE3 is a single-channel N-Channel power MOSFET utilizing TrenchFET technology. It features a 30 V drain-source voltage rating and a maximum continuous drain current of 3.9 A. The device offers low on-state resistance, specified as 58 mΩ at VGS = 10 V and 77 mΩ at VGS = 2.5 V. It operates within a junction temperature range of -55 °C to +150 °C and is housed in a compact SC-70 (SOT-363) package with six leads.
Single FETs, MOSFETs Feature Summary
- TrenchFET power MOSFET architecture for optimized performance
- High ESD protection capability rated at 1500 V in HBM
- SC-70 package design with four drain pins for improved thermal dissipation
Single FETs, MOSFETs Applications
- DC/DC converters
- Load switches
- OVP switches
- High frequency switching circuits
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix against official documentation to confirm lead-free status and halogen-free compliance. Confirm that the BE3 suffix aligns with the required material categorization standards. Ensure the component matches the SC-70 package outline and pin configuration before integration into the design.
Single FETs, MOSFETs Selection Notes
Select this component for applications requiring a miniaturized single-channel N-Channel MOSFET with robust thermal characteristics. The copper leadframe construction provides superior thermal conductivity compared to Alloy 42 alternatives. Evaluate the gate charge and threshold voltage requirements to ensure compatibility with the intended drive circuitry.
Single FETs, MOSFETs Part Context
This component belongs to the Vishay Siliconix Si14xxEDH series, which utilizes a copper leadframe in the SC-70 package. This series is designed for small to medium load applications where space constraints are critical. The copper leadframe significantly reduces thermal resistance compared to traditional Alloy 42 versions.
Single FETs, MOSFETs Replacement Considerations
Consult official datasheets for direct replacements within the Si14xxEDH family or equivalent SC-70 N-Channel MOSFETs from other manufacturers. Verify that any substitute maintains the 30 V rating, 3.9 A current capacity, and compatible pinout.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
