SI1539DDL-T1-GE3

Description：MOSFET N/P-CH 30V 0.7A SC70-6
Series：TrenchFET®

SKU:9730b2f0e80b Category: FET, MOSFET Arrays Brand: Vishay Siliconix

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Product introduction

Product Detailed Parameters

Description：MOSFET N/P-CH 30V 0.7A SC70-6
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：N and P-Channel
FET Feature：-
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：700mA (Tc), 460mA (Tc)
Rds On (Max) @ Id, Vgs：388mOhm @ 600mA, 10V, 1.07Ohm @ 400mA, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA, 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：1.1nC @ 4.5V, 1.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：28pF @ 15V, 21pF @ 15V
Power - Max：340mW
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：6-TSSOP, SC-88, SOT-363
Supplier Device Package：SC-70-6
Grade：-
Qualification：-

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SI1539DDL-T1-GE3

Overview

The Vishay Siliconix SI1539DDL-T1-GE3 is a dual N- and P-channel MOSFET in a SOT-363 (SC-70-6) package. It features TrenchFET technology with a 30 V drain-source voltage rating. The N-channel exhibits an on-resistance of 0.388 Ω at VGS = 10 V, while the P-channel shows 1.070 Ω under identical conditions. Continuous drain currents are rated at 0.7 A for the N-channel and -0.46 A for the P-channel at TC = 25 °C. Total gate charges are typically 1 nC for the N-channel and 1.5 nC for the P-channel. The device operates within a junction temperature range of -55 °C to +150 °C.

Feature Summary

Dual-channel configuration integrating both N- and P-channel enhancement-mode MOSFETs into a single compact surface-mount package.

Applications

DC/DC converter circuits
Load switch implementations

Procurement Notes

Verify the complete part number includes the suffixes -T1-GE3 to confirm the specific reel packaging and lead-free/halogen-free material compliance status. Ensure the ordering documentation explicitly references document number 62999 to match the technical specifications provided in the official datasheet.

Selection Notes

Select this component when space-constrained designs require complementary switching pairs. Evaluate thermal resistance limits carefully, as the small SC-70 package restricts steady-state power dissipation. Confirm that the required gate drive voltages align with the specified RDS(on) thresholds for optimal efficiency.

Part Context

This device belongs to the LITTLE FOOT family of dual-channel MOSFETs designed for miniaturized applications. It utilizes TrenchFET technology to achieve low on-resistance within a highly compact footprint. The dual configuration simplifies board layout by combining complementary channels into one standard surface-mount package.