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The SI1551DL-T1-E3 is a complementary dual N-channel MOSFET array manufactured by Vishay Siliconix. It operates within a drain-source voltage range of 20 V and features low on-resistance characteristics, typically specified at 5 ohms. The device supports a continuous drain current of up to 410 mA for the N-channel component and 290 mA for the complementary counterpart. Designed for surface-mount applications in SC-70-6 packages, it offers fast switching speeds with typical transition times of 35 ns. The component functions as a low-side switch suitable for power management tasks.
Verify the specific manufacturer datasheet for the SI1551DL-T1-E3 to confirm current production status and electrical tolerances. Ensure that the SC-70-6 package dimensions align with your PCB layout requirements. Cross-reference the absolute maximum ratings against your system's operational limits to prevent device failure during high-current or transient events.
Select this component when a compact dual MOSFET solution is required for low-voltage applications. The 20 V rating and moderate current capacity make it suitable for portable electronics. Consider the complementary nature of the array if both N-channel and P-channel functionalities are needed in a single footprint. Evaluate thermal dissipation constraints given the small package size.
This part belongs to the Vishay Siliconix discrete semiconductor portfolio, specifically within the MOSFET arrays category. The 'DL' suffix indicates the SC-70-6 surface-mount package type. The '-E3' designation confirms compliance with halogen-free manufacturing standards. It serves as a space-efficient alternative to discrete single MOSFETs in dense circuit designs.
Publicly confirmed substitute part numbers for the SI1551DL-T1-E3 are not available in the provided documentation. Verify compatibility with potential alternatives by matching pinout, voltage ratings, and current specifications directly from manufacturer cross-reference lists.