SI1553CDL-T1-GE3

$0.52

Description：MOSFET N/P-CH 20V 0.7A SC70-6
Series：TrenchFET®

SKU:752d749e59f8 Category: FET, MOSFET Arrays Brand: Vishay Siliconix

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Product introduction

Product Detailed Parameters

Description：MOSFET N/P-CH 20V 0.7A SC70-6
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：N and P-Channel
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：20V
Current - Continuous Drain (Id) @ 25°C：700mA, 500mA
Rds On (Max) @ Id, Vgs：390mOhm @ 700mA, 4.5V
Vgs(th) (Max) @ Id：1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：1.8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：38pF @ 10V
Power - Max：340mW
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：6-TSSOP, SC-88, SOT-363
Supplier Device Package：SC-70-6
Grade：-
Qualification：-

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SI1553CDL-T1-GE3

Overview

The Vishay Siliconix SI1553CDL-T1-GE3 is a dual-channel N- and P-Channel MOSFET utilizing TrenchFET technology. It features a maximum drain-source voltage of ±20 V and continuous drain currents of 0.7 A for the N-Channel and -0.5 A for the P-Channel. The device is housed in an SC-70 (SOT-363) surface-mount package with six leads. Maximum on-state resistance at VGS = ±4.5 V is 0.390 Ω for the N-Channel and 0.850 Ω for the P-Channel. Typical total gate charge values are 0.55 nC for the N-Channel and 0.95 nC for the P-Channel.

Feature Summary

TrenchFET power MOSFET technology
Dual configuration integrating N- and P-Channel transistors
Surface mount packaging for miniaturized applications

Applications

Load switching
DC/DC converter circuits

Procurement Notes

Verify component authenticity by checking the marking code RH against official documentation. Confirm that the ordering suffix -T1-GE3 corresponds to lead-free, halogen-free specifications as defined by the manufacturer. Ensure compatibility with standard SMD reflow processes before finalizing procurement orders.

Selection Notes

Select this component for low-power applications requiring compact dual-channel integration. Evaluate thermal performance based on specific PCB copper area and pad patterns, as junction-to-ambient resistance varies significantly with layout. Verify that required gate drive voltages align with specified RDS(on) thresholds for optimal efficiency.

Part Context

This part belongs to the LITTLE FOOT series of dual-channel MOSFETs designed for space-constrained environments. The SC-70 package provides a balance between current handling capability and footprint reduction compared to single-channel alternatives.