SI1563DH-T1-GE3

Overview

The SI1563DH-T1-GE3 is a P-channel enhancement mode MOSFET manufactured by Vishay Siliconix. It utilizes TrenchFET technology and is housed in an SC-70 (SOT-363) surface-mount package. The device features a drain-source breakdown voltage of -20 V and a continuous drain current of -2.7 A. Key electrical characteristics include a maximum on-resistance of 150 mOhms, a gate-source voltage rating of ±8 V, and a threshold voltage of 1 V. The component supports a junction temperature range from -55 °C to +150 °C with a power dissipation capacity of 2.8 W.

Feature Summary

• P-channel enhancement mode operation utilizing TrenchFET technology for low on-resistance.

Applications

• Power management circuits requiring compact P-channel switching solutions.

Procurement Notes

Verify the current lifecycle status before procurement as the component is listed as obsolete or having restricted supply in some channels. Confirm availability through authorized distributors and check for recommended alternatives if immediate production continuity is required. Ensure the specific ordering suffix matches the required packaging format.

Selection Notes

Select this component for applications requiring a -20 V P-channel MOSFET in a small SC-70 footprint. Consider the 150 mOhm on-resistance and 2.7 A current capability against thermal constraints. Verify that the 8 V gate drive requirements align with the system logic levels. Check for end-of-life status to ensure long-term supply viability.

Part Context

This part belongs to the SI1 series of MOSFETs from Vishay Siliconix. It is designed for general-purpose switching applications where space efficiency is critical. The SC-70 package provides a compact solution for portable and high-density electronic designs.