SI1563EDH-T1-GE3

Description：MOSFET N/P-CH 20V SC70-6
Series：TrenchFET®

SKU:4d4bf989a317 Category: FET, MOSFET Arrays Brand: Vishay Siliconix

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Product introduction

Product Detailed Parameters

Description：MOSFET N/P-CH 20V SC70-6
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：N and P-Channel
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：20V
Current - Continuous Drain (Id) @ 25°C：1.13A, 880mA
Rds On (Max) @ Id, Vgs：280mOhm @ 1.13A, 4.5V
Vgs(th) (Max) @ Id：1V @ 100µA
Gate Charge (Qg) (Max) @ Vgs：1nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：-
Power - Max：570mW
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：6-TSSOP, SC-88, SOT-363
Supplier Device Package：SC-70-6
Grade：-
Qualification：-

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SI1563EDH-T1-GE3

Overview

The SI1563EDH-T1-GE3 is a dual N-channel and P-channel MOSFET pair manufactured by Vishay / Siliconix. It utilizes TrenchFET technology and is housed in an SOT-363-6 surface-mount package. The device features a drain-source voltage rating of -20V for the N-channel and +12V for the P-channel, with gate-source voltages of ±8V. Continuous drain currents are specified at 440mA for the N-channel and 470mA for the P-channel. On-resistance values are 1.41 Ohms and 1.9 Ohms respectively. The component operates within a temperature range of -55°C to +175°C and has a power dissipation of 430mW.

Feature Summary

Dual configuration integrating complementary N-channel and P-channel transistors in a single compact package.
TrenchFET technology implementation for optimized performance characteristics.

Applications

Low-voltage load switching applications
Battery protection circuits
Portable electronic devices requiring space-efficient dual-transistor solutions

Procurement Notes

Verify the specific ordering suffix against official manufacturer documentation to confirm exact electrical tolerances and packaging variations. Confirm RoHS compliance status through current datasheets as regulatory requirements may evolve. Ensure compatibility with existing PCB footprints for the SOT-363-6 package before procurement.

Selection Notes

Select this component when a matched N-P channel pair is required for low-voltage switching tasks. Evaluate the on-resistance and current ratings against circuit load requirements. Consider the thermal dissipation capabilities relative to the available board space and ambient operating conditions.

Part Context

This part belongs to the SI1 series of dual MOSFETs from Vishay / Siliconix. It is designed for applications needing complementary switching in minimal footprint. The SOT-363-6 package allows for high-density mounting on printed circuit boards compared to discrete individual transistors.