SI1900DL-T1-E3

$0.73

Description：MOSFET 2N-CH 30V 0.59A SC70-6
Series：TrenchFET®

SKU:28a959f30120 Category: FET, MOSFET Arrays Brand: Vishay Siliconix

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 30V 0.59A SC70-6
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：590mA
Rds On (Max) @ Id, Vgs：480mOhm @ 590mA, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：1.4nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：-
Power - Max：270mW
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：6-TSSOP, SC-88, SOT-363
Supplier Device Package：SC-70-6
Grade：-
Qualification：-

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SI1900DL-T1-E3

Overview

The Vishay Siliconix Si1900DL-T1-E3 is a dual N-channel MOSFET utilizing TrenchFET technology, housed in an SOT-363 (SC-70) package. It features a drain-source voltage rating of 30 V and a continuous drain current of 0.63 A at 25 °C. The on-state resistance is specified as 0.48 Ω at VGS = 10 V and 0.70 Ω at VGS = 4.5 V. Operating junction temperatures range from -55 °C to +150 °C, with a maximum power dissipation of 0.30 W at 25 °C.

Feature Summary

Dual N-channel configuration within a compact surface-mount package
TrenchFET power MOSFET architecture for optimized performance
Halogen-free construction compliant with IEC 61249-2-21 standards

Applications

Battery protection circuits
Power management systems
Load switching applications

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm lead-free status and halogen compliance. Confirm that the component meets all RoHS Directive 2002/95/EC requirements prior to integration into final assemblies.

Selection Notes

Evaluate thermal constraints carefully due to the small SC-70 footprint and limited power dissipation capabilities. Ensure gate drive voltages align with the specified thresholds for optimal on-resistance characteristics during operation.

Part Context

This component belongs to the Si1900 series of dual N-channel MOSFETs manufactured by Vishay Siliconix. It is designed for portable electronics and battery-powered devices requiring efficient space-saving solutions.

Replacement Considerations

Consult official replacement lists or datasheets for compatible alternatives if this part becomes unavailable. Verify pinout compatibility and electrical specifications before substitution.