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SI2377EDS-T1-GE3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET P-CH 20V 4.4A SOT23-3. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for SI2377EDS-T1-GE3
- Description：MOSFET P-CH 20V 4.4A SOT23-3
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：4.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：1.5V, 4.5V
- Rds On (Max) @ Id, Vgs：61mOhm @ 3.2A, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：21 nC @ 8 V
- Vgs (Max)：±8V
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：1.25W (Ta), 1.8W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-23-3 (TO-236)
- Package / Case：TO-236-3, SC-59, SOT-23-3
Single FETs, MOSFETs datasheet and documents for SI2377EDS-T1-GE3
Single FETs, MOSFETs Overview
The SI2377EDS-T1-GE3 is a Vishay Siliconix P-channel enhancement mode MOSFET utilizing TrenchFET technology. It features a -20 V drain-source voltage and a maximum continuous drain current of -4.4 A at TC = 25 °C. The device offers a low on-state resistance of 61 mΩ at VGS = -4.5 V and 80 mΩ at VGS = -2.5 V, with a typical total gate charge of 7.6 nC. Packaged in a lead-free SOT-23 (TO-236) housing, it supports an operating junction temperature range from -55 °C to +150 °C.
Single FETs, MOSFETs Feature Summary
- TrenchFET power MOSFET architecture for optimized performance
- Integrated ESD protection featuring a built-in Zener diode
- Lead-free and halogen-free compliant construction
Single FETs, MOSFETs Applications
- Load switching for portable devices
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix against official documentation to confirm package type and compliance status. Ensure that the requested component matches the exact part number provided. Confirm technical specifications directly with the manufacturer or authorized distributors before finalizing procurement decisions.
Single FETs, MOSFETs Selection Notes
Select this component based on its -20 V rating and low on-resistance characteristics suitable for compact designs. Evaluate thermal management requirements relative to the specified junction-to-ambient resistance. Verify compatibility with system gate drive voltages to ensure optimal conduction efficiency.
Single FETs, MOSFETs Part Context
This component belongs to the Vishay Siliconix TrenchFET family of single N-channel and P-channel MOSFETs. These devices are engineered for high-speed switching applications requiring low power dissipation. The product line emphasizes reliability through rigorous testing protocols and standardized packaging solutions.
Single FETs, MOSFETs Replacement Considerations
Consult official replacement guides for verified substitutes. Cross-referencing requires matching critical electrical parameters such as voltage ratings, current capacity, and package dimensions.
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