SI3134KDWA-TP

SI3134KDWA-TP

$0.36
  • Description:MOSFET 2N-CH 20V 0.75A SOT363
  • Series:-

SKU:fde2840cae68 Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET 2N-CH 20V 0.75A SOT363
  • Series:-
  • Mfr:MCC (Micro Commercial Components)
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual)
  • FET Feature:-
  • Drain to Source Voltage (Vdss):20V
  • Current - Continuous Drain (Id) @ 25°C:750mA
  • Rds On (Max) @ Id, Vgs:300mOhm @ 500mA, 4.5V
  • Vgs(th) (Max) @ Id:1.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:0.8nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds:33pF @ 16V
  • Power - Max:150mW
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:6-TSSOP, SC-88, SOT-363
  • Supplier Device Package:SOT-363
  • Grade:-
  • Qualification:-

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SI3134KDWA-TP

Overview

The SI3134KDWA-TP is a dual N-channel MOSFET manufactured by Micro Commercial Components (MCC). It features a SOT-363S surface-mount package and operates with a drain-source voltage of 20 V. The device supports a continuous drain current of 750 mA at 25°C and dissipates up to 150 mW. Key electrical parameters include a maximum on-resistance of 800 milliohms at 450 mA and 1.8 V gate drive, and a threshold voltage of 1 V at 250 µA. Input capacitance is rated at 120 pF at 16 V. The component functions within a temperature range of -55°C to +150°C junction temperature.

Feature Summary

  • Dual configuration integrating two independent N-channel enhancement-mode field-effect transistors in a single compact package.
  • Optimized for low-voltage applications with high gate controllability and fast switching characteristics.
  • Designed for surface-mount assembly to support automated manufacturing processes.

Applications

  • Low-side switching circuits
  • Load management systems
  • Battery protection modules

Procurement Notes

Verify the specific suffix KDWA against the manufacturer's official datasheet to confirm pinout compatibility and electrical tolerances. Ensure the procurement source provides valid RoHS compliance documentation. Confirm that the supplier handles the SOT-363S packaging format correctly to prevent damage during handling. Validate that the batch meets the specified operating temperature range requirements for the intended application environment.

Selection Notes

Select this component when a dual N-channel configuration is required in a minimal footprint. Compare the 800 milliohm on-resistance against circuit loss requirements. Verify that the 20 V breakdown voltage exceeds the maximum system voltage. Consider the 150 mW power dissipation limit relative to thermal management capabilities. Ensure the SOT-363S package fits the available board space constraints.

Part Context

This part belongs to the SI3134 series of small signal MOSFETs from Micro Commercial Components. The series includes variants with different packages such as SOT-723 and SOT-523. The KDWA suffix specifically denotes the dual N-channel topology housed in a SOT-363S outline. This family targets portable electronics and battery-powered devices requiring efficient power switching.

FAQ

What is the maximum gate-source voltage rating?

The maximum gate-source voltage is ±12 V.

Does this component contain P-channel transistors?

No, the SI3134KDWA-TP contains only N-channel transistors.

What is the input capacitance value?

The maximum input capacitance is 120 pF at 16 V.

SI3134KDWA-TPSI3134KDWA-TP
$0.36
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