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SI3477DV-T1-GE3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET P-CH 12V 8A 6TSOP. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for SI3477DV-T1-GE3
- Description：MOSFET P-CH 12V 8A 6TSOP
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：12 V
- Current - Continuous Drain (Id) @ 25°C：8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
- Rds On (Max) @ Id, Vgs：17.5mOhm @ 9A, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：90 nC @ 10 V
- Vgs (Max)：±10V
- Input Capacitance (Ciss) (Max) @ Vds：2600 pF @ 6 V
- FET Feature：-
- Power Dissipation (Max)：2W (Ta), 4.2W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：6-TSOP
- Package / Case：SOT-23-6 Thin, TSOT-23-6
Single FETs, MOSFETs datasheet and documents for SI3477DV-T1-GE3
Single FETs, MOSFETs Overview
The SI3477DV-T1-GE3 is a single P-channel MOSFET from Vishay Siliconix utilizing TrenchFET technology. It features a -12 V drain-source voltage and an -8 A continuous drain current rating. The device offers low on-state resistance, specified as 0.0175 Ω at VGS = -4.5 V and 0.0230 Ω at VGS = -2.5 V. Typical total gate charge is 28.3 nC at VGS = -4.5 V. It operates within a junction temperature range of -55 °C to +150 °C and is housed in a TSOP-6 surface-mount package.
Single FETs, MOSFETs Feature Summary
- TrenchFET power MOSFET architecture optimized for PWM applications
- Low on-state resistance across multiple gate drive voltages
- High switching speed with typical turn-on rise time of 30 ns
Single FETs, MOSFETs Applications
- Load switch circuits
- DC/DC converters
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix against official documentation to confirm lead-free and halogen-free compliance status. Ensure the component matches the required TSOP-6 package dimensions and pinout configuration for your PCB layout. Cross-reference the datasheet revision date to validate that all electrical parameters align with your design specifications before finalizing procurement.
Single FETs, MOSFETs Selection Notes
Select this component when a low-voltage, high-current P-channel switch is required. The TSOP-6 package provides a compact footprint suitable for space-constrained designs. Evaluate thermal management requirements based on the junction-to-ambient resistance ratings provided in the datasheet to ensure reliable operation under expected load conditions.
Single FETs, MOSFETs Part Context
This part belongs to the Vishay Siliconix Si3477DV series of P-channel MOSFETs. It is designed for general-purpose switching applications requiring efficient power handling in small packages. The TrenchFET technology enables improved performance characteristics compared to standard planar devices, particularly regarding on-resistance and switching efficiency.
Single FETs, MOSFETs Replacement Considerations
Consult official Vishay documentation for confirmed substitute part numbers. Verify compatibility regarding voltage ratings, current capacity, and package dimensions before substitution.
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