SI3588DV-T1-E3

$0.75

Description：MOSFET N/P-CH 20V 6TSOP
Series：TrenchFET®

SKU:451b09bc04dd Category: FET, MOSFET Arrays Brand: Vishay Siliconix

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Product introduction

Product Detailed Parameters

Description：MOSFET N/P-CH 20V 6TSOP
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：N and P-Channel
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：20V
Current - Continuous Drain (Id) @ 25°C：2.5A, 570mA
Rds On (Max) @ Id, Vgs：80mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id：450mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs：7.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：-
Power - Max：830mW, 83mW
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：SOT-23-6 Thin, TSOT-23-6
Supplier Device Package：6-TSOP
Grade：-
Qualification：-

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SI3588DV-T1-E3

Overview

The SI3588DV-T1-E3 is a complementary N- and P-channel MOSFET manufactured by Vishay Siliconix. It utilizes TrenchFET technology within the SI3 series, housed in a TSOP-6 surface-mount package. The component integrates dual transistors into a single unit to facilitate efficient power switching applications. Key electrical parameters include specific drain-source voltage ratings and on-resistance values defined for both channel types. The device supports SMD/SMT installation and operates within standard industrial temperature ranges.

Feature Summary

Integrates complementary N- and P-channel MOSFETs in a compact TSOP-6 package
Utilizes TrenchFET technology for optimized performance
Designed for surface-mount assembly

Applications

Power management circuits requiring complementary switching
DC/DC converter topologies
Battery protection modules

Procurement Notes

This component is listed as End-of-Life (EOL) or obsolete. Verification of current availability through authorized distributors is required. Designers should consult official obsolescence notifications from Vishay Semiconductors to confirm production status and identify valid replacement strategies before finalizing procurement plans.

Selection Notes

Select this part only if the TSOP-6 footprint and complementary configuration are mandatory. Verify that the specific voltage and current ratings meet the circuit requirements. Due to its obsolete status, alternative components with identical pinouts and electrical characteristics must be evaluated for compatibility.

Part Context

The SI3588DV-T1-E3 belongs to the SI3 series of complementary MOSFETs from Vishay Siliconix. This series is characterized by low on-resistance and fast switching speeds. The TSOP-6 package provides a small form factor suitable for space-constrained designs. It serves as a discrete solution for driving loads in synchronous rectification or half-bridge configurations.