SI3590DV-T1-GE3

Overview

The Vishay Siliconix SI3590DV-T1-GE3 is a dual N- and P-channel MOSFET in a TSOP-6 package. It features TrenchFET technology for ultra-low on-resistance, optimized for high-side and low-side switching applications to minimize conduction losses. The N-channel device supports a drain-source voltage of 30 V with a typical RDS(on) of 0.077 Ω at VGS = 4.5 V and a continuous drain current of 3 A. The P-channel counterpart offers -30 V breakdown with a typical RDS(on) of 0.170 Ω at VGS = -4.5 V and a continuous drain current of -2 A. Both channels share a maximum junction temperature range of -55 °C to +150 °C.

Feature Summary

• TrenchFET power MOSFET architecture providing ultra-low on-resistance for both N- and P-channels.
• Optimized configuration for high-side and low-side switching applications.
• Minimized conduction losses through advanced trench gate technology.

Applications

• Portable devices including PDAs
• Cellular phones
• Pagers

Procurement Notes

Verify the ordering suffix 'GE3' confirms lead-free and halogen-free compliance status as specified in the manufacturer's documentation. Ensure the component matches the TSOP-6 package dimensions and pinout configuration required by the target PCB layout. Cross-reference the specific document revision number against the latest official datasheet to confirm no parameter updates have occurred since publication.

Selection Notes

Select this dual MOSFET when space-constrained designs require complementary N- and P-channel switching in a single footprint. Evaluate thermal resistance ratings against the expected ambient temperature and duty cycle to ensure junction temperatures remain within the -55 °C to +150 °C operating range. Confirm that the gate drive voltage levels are sufficient to achieve the specified low on-resistance values for efficient power management.

Part Context

This component belongs to the Vishay Siliconix Si3590 series of dual MOSFETs. It utilizes the TSOP-6 surface-mount package, which is standardized under JEDEC MO-193C. The device integrates separate N-channel and P-channel structures on a single substrate, designed specifically for portable electronics where board area and switching efficiency are critical constraints.

Replacement Considerations

Consult official Vishay documentation for confirmed substitute part numbers. Verify pin compatibility and electrical specifications before substituting any alternative components.

FAQ

What is the maximum pulsed drain current for the SI3590DV?

The maximum pulsed drain current (IDM) is 8 A for the N-channel and 8 A for the P-channel.

What is the gate threshold voltage range for these MOSFETs?

The gate threshold voltage (VGS(th)) ranges from 0.6 V to 1.5 V for the N-channel and -0.6 V to -1.5 V for the P-channel, tested at ID = ±250 μA.

How does the on-resistance vary with temperature?

The on-resistance increases with junction temperature. Typical characteristics show normalized RDS(on) rising significantly as temperature increases from -55 °C to +150 °C.