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The SI3981DV-T1-GE3 is a dual P-channel MOSFET manufactured by Vishay Siliconix, utilizing TrenchFET technology. It features a TSOP-6 surface-mount package and operates with a drain-source voltage of -20 V. The device supports a continuous drain current of 4 A per channel and maintains a low on-resistance of 55 mOhms at an 8 V gate drive. It includes built-in gate-to-source zener protection to safeguard against electrostatic discharge. The component is rated for junction temperatures up to +175 °C and complies with RoHS standards.
Verify the specific suffix and revision level when sourcing replacements, as manufacturing updates may occur. Confirm RoHS compliance status directly with the supplier or through official documentation, as regulatory requirements evolve. Ensure that the TSOP-6 package dimensions match your PCB layout constraints before finalizing procurement decisions.
Select this component for designs requiring dual P-channel switching in space-constrained environments. The 55 mOhm on-resistance offers efficient power handling for moderate current loads. Consider the 20 V rating for compatibility with standard 12 V systems. Evaluate thermal dissipation requirements based on the expected duty cycle and ambient temperature conditions during operation.
This part belongs to the SI39 series of dual MOSFETs from Vishay Siliconix. It shares the TSOP-6 package form factor with other members like the SI3983DV, though electrical characteristics vary significantly across the series. The SI3981DV specifically targets applications needing two isolated P-channel switches in a minimal outline package.
Direct substitutes include the SI3983DV-T1-GE3, which shares the same package but differs in electrical ratings. Verify pinout compatibility and ensure that the alternative's voltage and current specifications meet or exceed the original design requirements.