SI3993DV-T1-GE3

Overview

The SI3993DV-T1-GE3 is a dual P-channel MOSFET from Vishay Siliconix, utilizing TrenchFET technology. It features a 30 V drain-source voltage and a continuous drain current of 2.2 A. The device exhibits a maximum on-resistance of 133 mOhms at a gate-source voltage of -4.5 V. It operates within a temperature range of -55°C to +150°C junction temperature, with a power dissipation rating of 1.15 W. Packaged in a TSOP-6 surface-mount case, it includes a gate charge of 5 nC and a threshold voltage of 1 V.

Feature Summary

• Dual P-channel configuration for complementary switching applications
• TrenchFET technology for optimized on-resistance performance
• TSOP-6 surface-mount package design

Applications

• Low-side load switches
• Power management circuits
• Battery protection modules

Procurement Notes

Verify the specific ordering suffix against official Vishay documentation to confirm package type and tape-and-reel specifications. Confirm RoHS compliance status through the manufacturer's latest product data sheet before finalizing procurement plans.

Selection Notes

Select this component when a dual P-channel solution is required in a compact TSOP-6 footprint. Ensure the 30 V breakdown voltage and 2.2 A current rating align with the target circuit requirements. Verify thermal management capabilities given the 1.15 W power dissipation limit.

Part Context

This part belongs to the SI3 series of TrenchFET MOSFETs manufactured by Vishay Siliconix. The series focuses on providing efficient power switching solutions in small surface-mount packages suitable for portable and industrial electronics.

Replacement Considerations

Check for direct cross-reference part numbers from Vishay or other manufacturers offering identical pinouts and electrical characteristics. Ensure any substitute maintains the same TSOP-6 package dimensions and thermal properties.