SI4048DY-T1-GE3

$0.43

Description：MOSFET N-CH 30V 19.3A 8SO
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:0d59a5525904 Category: Single FETs, MOSFETs Brand: Vishay Siliconix

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Product introduction

SI4048DY-T1-GE3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET N-CH 30V 19.3A 8SO. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for SI4048DY-T1-GE3

Description：MOSFET N-CH 30V 19.3A 8SO
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：19.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：85mOhm @ 15A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：51 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2060 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：2.5W (Ta), 5.7W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-SOIC
Package / Case：8-SOIC (0.154", 3.90mm Width)

Single FETs, MOSFETs datasheet and documents for SI4048DY-T1-GE3

SI4048DY-T1-GE3

Single FETs, MOSFETs Overview

The Vishay Siliconix SI4048DY-T1-GE3 is a single N-channel Power MOSFET utilizing TrenchFET technology, housed in an SO-8 surface-mount package. It features a drain-source voltage rating of 30 V and a continuous drain current of 19.3 A at 25 °C case temperature. The device exhibits a maximum on-state resistance of 0.0105 Ω at VGS = 4.5 V and 0.0085 Ω at VGS = 10 V. Total gate charge is typically 15 nC at VGS = 4.5 V and 34 nC at VGS = 10 V. Operating junction and storage temperatures range from -55 °C to +150 °C.

Single FETs, MOSFETs Feature Summary

TrenchFET power MOSFET architecture for optimized performance
100% tested for gate resistance and unclamped inductive switching (UIS)
Halogen-free construction compliant with IEC 61249-2-21 definition

Single FETs, MOSFETs Applications

Notebook DC/DC high-side switching

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix '-T1-GE3' against official documentation to confirm lead-free status and halogen-free compliance. Confirm that the SO-8 narrow package dimensions match the target PCB footprint requirements. Ensure the component meets RoHS Directive 2002/95/EC standards if required by the manufacturing environment.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring low on-resistance and fast switching characteristics within a 30 V system. Evaluate thermal management needs based on the specified junction-to-ambient and junction-to-foot thermal resistances. Verify that the gate drive voltage aligns with the specified thresholds for optimal RDS(on) performance.

Single FETs, MOSFETs Part Context

This part belongs to the Vishay Siliconix SI4 series of N-channel MOSFETs. It utilizes the SO-8 (Narrow) JEDEC package format. The product is manufactured using silicon technology and is designed for surface mount assembly on FR4 boards.