SI4230DY-T1-GE3

Overview

The Vishay Siliconix SI4230DY-T1-GE3 is a dual N-channel MOSFET utilizing TrenchFET technology, housed in an SO-8 package. It features a drain-source voltage (VDS) of 30 V and a continuous drain current (ID) of 8 A at TC = 25 °C. The on-state resistance (RDS(on)) is typically 0.0205 Ω at VGS = 10 V and 0.026 Ω at VGS = 4.5 V. Total gate charge (Qg) is typically 7.3 nC at VGS = 10 V. Maximum power dissipation is 3.2 W at TC = 25 °C. Operating junction temperature ranges from -55 °C to +150 °C.

Feature Summary

• Dual N-channel configuration with independent gates and drains for compact integration
• TrenchFET power MOSFET technology optimized for low on-resistance and fast switching
• 100% tested for gate resistance and single-pulse avalanche energy

Applications

• Low current DC/DC converters
• Notebook PC system power management

Procurement Notes

Verify the component against the official Vishay datasheet document number 68983. Confirm that the marking code matches the specific revision and manufacturing lot requirements. Ensure compliance with halogen-free specifications as documented in the product summary. Cross-reference the ordering suffix with authorized distributors to validate authenticity and traceability.

Selection Notes

Select this component when a dual N-channel topology is required within an SO-8 footprint. Evaluate thermal performance based on the specified junction-to-ambient resistance values under steady-state conditions. Verify that the gate drive voltage meets the threshold requirements for the desired on-state resistance level. Consider the maximum pulsed drain current limits during transient load analysis.

Part Context

This part belongs to the Vishay Siliconix SI4 series of TrenchFET MOSFETs. It is designed for surface-mount applications requiring high density. The device integrates two independent N-channel transistors in a single package to reduce board space compared to discrete solutions.

Replacement Considerations

Consult the manufacturer's documentation for officially recommended alternative part numbers. Verify pinout compatibility and electrical parameter equivalence before substitution.

FAQ

What is the typical total gate charge (Qg) at VGS = 10 V?

The typical total gate charge is 7.3 nC.

Is the device tested for avalanche capability?

Yes, the datasheet specifies that 100% of units are tested for gate resistance and single-pulse avalanche energy.

What is the maximum operating junction temperature?

The maximum operating junction temperature is 150 °C.