SI4276DY-T1-GE3

Overview

The Vishay Siliconix SI4276DY-T1-GE3 is a dual N-channel MOSFET utilizing TrenchFET technology, housed in an SO-8 surface-mount package. It features two independent channels with a drain-source voltage (VDS) of 30 V and a gate-source voltage (VGS) rating of ±20 V. At VGS = 10 V, the on-state resistance (RDS(on)) is typically 0.0153 Ω for Channel 1 and 0.0280 Ω for Channel 2. The device supports continuous drain currents up to 8 A at TC = 25 °C per channel. Operating junction temperatures range from -55 °C to +150 °C.

Feature Summary

• Dual N-channel configuration within a single SO-8 package
• TrenchFET power MOSFET technology
• Halogen-free construction compliant with IEC 61249-2-21
• 100% UIS tested

Applications

• DC/DC converters for notebook PCs

Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance and halogen-free status against current regulatory standards. Validate datasheet revision history to ensure alignment with specific design requirements before finalizing procurement orders.

Selection Notes

Evaluate thermal management strategies based on the specified junction-to-ambient and junction-to-foot thermal resistances. Ensure gate drive voltages remain within the ±20 V limit while optimizing RDS(on) performance. Consider the distinct electrical characteristics between Channel 1 and Channel 2 when designing symmetric or asymmetric load circuits.

Part Context

This component belongs to the Vishay Siliconix SI4 series of TrenchFET MOSFETs. The suffix 'T1' indicates tape-and-reel packaging, while 'GE3' denotes lead-free and halogen-free manufacturing. The base part number corresponds to the Si4276DY specification document.

Replacement Considerations

SI4276DY-GE3 is listed as an alias for this component.