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SI4320DY-T1-E3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET N-CH 30V 17A 8SO. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for SI4320DY-T1-E3
- Description：MOSFET N-CH 30V 17A 8SO
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：17A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：3mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：70 nC @ 4.5 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：6500 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：1.6W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-SOIC
- Package / Case：8-SOIC (0.154", 3.90mm Width)
Single FETs, MOSFETs datasheet and documents for SI4320DY-T1-E3
Single FETs, MOSFETs Overview
The Vishay Siliconix SI4320DY-T1-E3 is an N-channel 30-V (D-S) MOSFET utilizing TrenchFET Gen II technology. It features ultra-low on-resistance of 0.003 Ω at VGS = 10 V and 0.004 Ω at VGS = 4.5 V, supporting continuous drain currents of 25 A at TA = 25 °C and 22 A at VGS = 4.5 V. The device operates within a junction temperature range of -55 to 150 °C and is housed in an SO-8 surface-mount package.
Single FETs, MOSFETs Feature Summary
- Utilizes high-density TrenchFET Power MOSFET technology for ultra-low on-resistance
- Compliant with IEC 61249-2-21 halogen-free standards
- Designed for synchronous buck low-side and synchronous rectifier-POL applications
Single FETs, MOSFETs Applications
- Synchronous Buck Low-Side for Notebook computers
- Synchronous Buck Low-Side for Server systems
- Synchronous Rectifier-POL for Workstation systems
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix when sourcing components. The SI4320DY-T1-E3 designation indicates a lead (Pb)-free component. Ensure compatibility with the required halogen-free status if mandated by project specifications. Confirm that the SO-8 package dimensions align with the recommended minimum pad layout provided in Vishay Application Note 826 for proper surface mounting.
Single FETs, MOSFETs Selection Notes
Select this component for designs requiring low gate charge and fast switching speeds in power management circuits. The device supports a maximum pulsed drain current of 70 A and offers robust thermal performance with a steady-state junction-to-ambient resistance of 67 °C/W. Validate that the operating voltage remains within the 30 V drain-source limit and that thermal dissipation requirements are met under steady-state conditions.
Single FETs, MOSFETs Part Context
This part belongs to the Vishay Siliconix SI4 series of N-channel MOSFETs. It is manufactured using silicon technology and is available in the SO-8 narrow package. The product is identified by Document Number 72212 and represents a generation of power transistors optimized for efficiency in portable and server-grade electronic equipment.
Single FETs, MOSFETs Replacement Considerations
The datasheet lists Si4320DY-T1-GE3 as a lead (Pb)-free and halogen-free alternative. Verify pinout compatibility and electrical parameters before substituting.
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