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Product Detailed Parameters
- Description：MOSFET 2N-CH 20V 14.1A 14SOIC
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：14.1A, 20A
- Rds On (Max) @ Id, Vgs：9.4mOhm @ 11.5A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：32nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：1300pF @ 10V
- Power - Max：3W, 5.4W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：14-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：14-SOIC
- Grade：-
- Qualification：-
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Overview
The SI4340CDY-T1-E3 is a dual P-channel MOSFET manufactured by Vishay Siliconix, utilizing TrenchFET technology. It features a 20V drain-source voltage rating and a continuous drain current of 8A per channel. The device offers a low on-resistance of 25 milliohms at a gate-source voltage of -4.5V. Packaged in an SOIC-8 surface-mount case, it supports a maximum power dissipation of 1.6W and operates within a temperature range of -55°C to +150°C.
Feature Summary
- Dual independent P-channel configuration for efficient high-side switching applications
- TrenchFET technology provides optimized on-resistance and fast switching performance
- Enhanced gate threshold voltage allows compatibility with standard logic levels
Applications
- Power management circuits requiring dual high-side load switches
- Battery protection modules for portable electronic devices
- DC-DC converter input/output stages
Procurement Notes
Verify the specific suffix against official Vishay documentation to confirm package type and tape-and-reel specifications. Ensure that the ordering information matches the exact electrical characteristics required for the target design, as minor variations may exist between manufacturing revisions.
Selection Notes
Select this component when a compact dual P-channel solution is needed for low-voltage power distribution. Compare the 25 milliohm on-resistance against thermal constraints to ensure adequate heat dissipation within the SOIC-8 footprint for the intended current load.
Part Context
This part belongs to the SI4 series of Vishay Siliconix MOSFETs, which are designed for general-purpose switching applications. The SI4340 variant specifically addresses the need for dual-channel integration in space-constrained designs, replacing discrete single-channel setups.
Replacement Considerations
Direct substitutes include the SI4340DY-T1-E3, which shares identical electrical parameters but utilizes a different packaging format. Verify pinout compatibility before implementation.
