SI4398DY-T1-E3

Single FETs, MOSFETs Overview

The Vishay Siliconix SI4398DY-T1-E3 is an N-channel MOSFET utilizing TrenchFET technology, housed in a surface-mount SO-8 package. It features a drain-source voltage rating of 20 V and a continuous drain current of 25 A at 25 °C. The device achieves an extremely low on-resistance of 0.0028 Ω maximum at VGS = 10 V and 0.0040 Ω at VGS = 4.5 V. Designed for high efficiency, it incorporates reduced gate charge characteristics to minimize switching losses.

Single FETs, MOSFETs Feature Summary

• Utilizes TrenchFET technology to achieve ultra-low on-resistance for improved conduction efficiency.
• Features significantly reduced gate-drain charge (Qgd) to minimize switching energy losses during operation.
• Manufactured using halogen-free materials compliant with IEC 61249-2-21 standards.

Single FETs, MOSFETs Applications

• Synchronous rectification in low power DC/DC converters
• Point-of-load (POL) regulation circuits
• OR-ing applications

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix when sourcing components. The -E3 suffix indicates lead-free construction, while the -GE3 suffix denotes both lead-free and halogen-free compliance. Confirm that the required package variant matches the intended PCB footprint before procurement.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring low thermal resistance and fast switching speeds within a 20 V system. Ensure the application operates within the specified junction temperature range of -55 °C to 150 °C. Validate that the gate drive voltage meets the requirements for optimal RDS(on) performance.

Single FETs, MOSFETs Part Context

This part belongs to the Vishay Siliconix Si4 series of N-channel MOSFETs. These devices are engineered for high-density power conversion applications where minimizing switching losses and reducing heat generation are critical design constraints.

Single FETs, MOSFETs Replacement Considerations

Public documentation identifies the SI4398DY-T1-GE3 as a verified alternative offering identical electrical specifications with halogen-free compliance.

Single FETs, MOSFETs FAQ

What is the maximum continuous drain current for this device?

The maximum continuous drain current is 25 A at an ambient temperature of 25 °C.

Does this component meet halogen-free standards?

The standard -E3 version is not explicitly defined as halogen-free in the summary; however, the -GE3 variant is confirmed to be halogen-free according to IEC 61249-2-21.