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SI4413CDY-T1-GE3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET P-CH 30V 8-SOIC. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for SI4413CDY-T1-GE3
- Description：MOSFET P-CH 30V 8-SOIC
- Series：-
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-SOIC
- Package / Case：8-SOIC (0.154", 3.90mm Width)
Single FETs, MOSFETs datasheet and documents for SI4413CDY-T1-GE3
Single FETs, MOSFETs Overview
The SI4413CDY-T1-GE3 is a P-channel Power MOSFET manufactured by Vishay Siliconix, utilizing TrenchFET technology. It features a 30V drain-source breakdown voltage and supports a continuous drain current of 15A. The device offers a low on-resistance of 7.5mΩ at 10V gate drive. Packaged in an SOIC-8 surface-mount case, it operates within a temperature range of -55°C to +150°C junction temperature with a power dissipation rating of 3.0W.
Single FETs, MOSFETs Feature Summary
- Utilizes TrenchFET technology for enhanced performance
- Designed for high-efficiency switching applications
- Supports single-channel P-Channel configuration
Single FETs, MOSFETs Applications
- Power management circuits
- Load switching applications
- DC-DC converter output stages
Single FETs, MOSFETs Procurement Notes
Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status via official documentation. Check for AEC-Q101 qualification if automotive standards are required. Validate package markings against datasheet specifications to ensure correct part identification before integration into production systems.
Single FETs, MOSFETs Selection Notes
Select this component for designs requiring robust P-channel switching with moderate current capabilities. Ensure thermal management strategies accommodate the 3.0W power dissipation limit. Verify that gate drive voltages remain within the specified ±20V limits to prevent device damage. Consider the SOIC-8 footprint constraints during PCB layout planning.
Single FETs, MOSFETs Part Context
This part belongs to the SI4 series of Power MOSFETs from Vishay Siliconix. It represents a specific variant optimized for general-purpose power switching tasks. The product line emphasizes reliability and efficiency in compact surface-mount packages suitable for modern electronic equipment design requirements.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
