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SI4421DY-T1-GE3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET P-CH 20V 10A 8SO. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for SI4421DY-T1-GE3
- Description：MOSFET P-CH 20V 10A 8SO
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：10A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
- Rds On (Max) @ Id, Vgs：8.75mOhm @ 14A, 4.5V
- Vgs(th) (Max) @ Id：800mV @ 850µA
- Gate Charge (Qg) (Max) @ Vgs：125 nC @ 4.5 V
- Vgs (Max)：±8V
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：1.5W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-SOIC
- Package / Case：8-SOIC (0.154", 3.90mm Width)
Single FETs, MOSFETs datasheet and documents for SI4421DY-T1-GE3
Single FETs, MOSFETs Overview
The Vishay Siliconix SI4421DY-T1-GE3 is a P-channel enhancement mode power MOSFET utilizing TrenchFET technology. It features a -20 V drain-source voltage rating and a continuous drain current of -14 A at 25 °C. The device achieves a maximum on-resistance of 8.75 mΩ at a gate-source voltage of -4.5 V. Packaged in an SO-8 surface-mount footprint, it supports a junction temperature range from -55 °C to +150 °C with a maximum power dissipation of 3.0 W.
Single FETs, MOSFETs Feature Summary
- TrenchFET technology enables low on-state resistance for efficient power switching
- Enhancement mode operation provides reliable control via standard logic-level gate signals
- Lead-free and halogen-free construction meets environmental compliance standards
Single FETs, MOSFETs Applications
- Game station load switching
- Power management circuits requiring P-channel regulation
- General-purpose high-side switching applications
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix against official documentation to confirm lead-free and halogen-free status. Confirm package dimensions match the SO-8 narrow profile specifications. Validate thermal performance requirements against the provided junction-to-ambient resistance ratings before finalizing procurement decisions.
Single FETs, MOSFETs Selection Notes
Select this component for applications requiring a -20 V P-channel switch with high current handling capabilities. Ensure the driving circuit can supply sufficient gate charge to achieve the specified low on-resistance. Evaluate thermal management strategies based on the steady-state power dissipation limits and ambient operating conditions.
Single FETs, MOSFETs Part Context
This part belongs to the Vishay Siliconix Si4421 series of P-channel MOSFETs. It utilizes the TrenchFET architecture to optimize the trade-off between conduction losses and switching speed. The device is designed for surface-mount assembly, offering a compact solution for modern electronic designs requiring robust power switching.
Single FETs, MOSFETs Replacement Considerations
Consult official Vishay documentation for qualified alternative part numbers. Verify that any substitute matches the critical electrical parameters, including voltage ratings, current capacity, and on-resistance characteristics.
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