SI4431CDY-T1-GE3

$0.77

Description：MOSFET P-CH 30V 9A 8SO
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:5e95bdd61118 Category: Single FETs, MOSFETs Brand: Vishay Siliconix

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Product introduction

SI4431CDY-T1-GE3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET P-CH 30V 9A 8SO. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for SI4431CDY-T1-GE3

Description：MOSFET P-CH 30V 9A 8SO
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：32mOhm @ 7A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：38 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1006 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：2.5W (Ta), 4.2W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-SOIC
Package / Case：8-SOIC (0.154", 3.90mm Width)

Single FETs, MOSFETs datasheet and documents for SI4431CDY-T1-GE3

SI4431CDY-T1-GE3

Single FETs, MOSFETs Overview

The SI4431CDY-T1-GE3 is a Vishay Siliconix P-Channel MOSFET utilizing TrenchFET technology. It features a -30 V drain-source voltage and a continuous drain current of -9 A at 25 °C case temperature. The device offers a maximum on-state resistance of 0.032 Ω at VGS = -10 V and 0.049 Ω at VGS = -4.5 V. Total gate charge is typically 38 nC at VGS = -10 V. It operates within a junction temperature range of -55 °C to +150 °C and is housed in an SO-8 package.

Single FETs, MOSFETs Feature Summary

TrenchFET power MOSFET architecture for optimized performance
Single-channel P-Channel configuration with enhanced switching characteristics
Lead-free and halogen-free compliant construction

Single FETs, MOSFETs Applications

Load switch applications
Battery switch circuits

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against official documentation, as variants such as Si4431CDY-T1-E3 exist. Confirm RoHS compliance status through manufacturer resources. Ensure the component matches the required SO-8 package dimensions and pinout configuration before integration into the design.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring a single P-Channel switch with low on-resistance. Evaluate thermal management requirements based on the specified junction-to-ambient and junction-to-foot thermal resistances. Verify that the gate drive voltage meets the threshold requirements for the desired load current levels.

Single FETs, MOSFETs Part Context

This part belongs to the Vishay Siliconix SI4 series of power MOSFETs. It utilizes the TrenchFET generation technology to achieve high performance in a compact surface-mount package. The product line focuses on efficient power switching solutions for various electronic applications.