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Product Detailed Parameters
- Description：MOSFET N/P-CH 30V/8V 6.3A 8SOIC
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel, Common Drain
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：30V, 8V
- Current - Continuous Drain (Id) @ 25°C：6.3A, 4.1A
- Rds On (Max) @ Id, Vgs：18mOhm @ 8.8A, 10V
- Vgs(th) (Max) @ Id：1.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：20nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：1.3W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOIC
- Grade：-
- Qualification：-
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Overview
The SI4501ADY-T1-GE3 is a complementary dual N- and P-channel MOSFET manufactured by Vishay Siliconix. It utilizes TrenchFET technology to achieve low on-resistance in an SOIC-8 surface-mount package. The device supports a drain-source voltage of 60V for both channels. Key electrical parameters include a continuous drain current of 12A for the N-channel and 11A for the P-channel, with maximum on-resistances of 27mΩ and 35mΩ respectively at Vgs=10V. The gate-source voltage rating is ±20V, and it operates within a temperature range of -55°C to +150°C.
Feature Summary
- Complementary configuration integrating single N-channel and P-channel devices in one package
- TrenchFET power technology optimized for low on-resistance and fast switching performance
- Logic-level gate drive capability suitable for direct interface with standard logic outputs
Applications
- DC/DC converter synchronous rectification circuits
- Power management units requiring compact dual-transistor solutions
- Battery protection and load switch applications
Procurement Notes
Verify the specific suffix 'A' against the manufacturer's official datasheet to confirm exact electrical tolerances and binning specifications. Ensure the ordering part number matches the required tape and reel packaging format. Cross-reference the RoHS compliance status with the latest environmental declarations provided by Vishay Siliconix prior to final procurement.
Selection Notes
Select this component when space constraints require a complementary pair in a single footprint. Evaluate thermal dissipation requirements based on the specified power dissipation limits in the SOIC-8 package. Compare on-resistance values against system efficiency targets to ensure adequate performance under expected load currents and operating temperatures.
Part Context
This component belongs to the SI45xx series of complementary MOSFETs from Vishay Siliconix. It is designed as a cost-effective alternative to discrete dual transistors, reducing board space and assembly complexity. The series is widely used in portable electronics and industrial power supplies where high efficiency and small form factors are critical design drivers.
Replacement Considerations
Consult official substitution guides for equivalent complementary pairs such as the SI4501BDY or SI4502DY. Verify pin compatibility and thermal characteristics before replacing. Ensure that any substitute part meets or exceeds the original voltage and current ratings.
