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Product Detailed Parameters
- Description：MOSFET N/P-CH 40V 10A/9.2A 8SOIC
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：40V
- Current - Continuous Drain (Id) @ 25°C：10A, 9.2A
- Rds On (Max) @ Id, Vgs：17.5mOhm @ 8A, 10V
- Vgs(th) (Max) @ Id：2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：31nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：855pF @ 20V
- Power - Max：3.1W, 3.2W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOIC
- Grade：-
- Qualification：-
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Overview
The Vishay Siliconix SI4564DY-T1-GE3 is a dual MOSFET in an SO-8 package, containing one N-channel and one P-channel device. The N-channel unit features a 40 V drain-source voltage (VDS), a maximum continuous drain current (ID) of 10 A at TC = 25 °C, and a typical on-resistance (RDS(on)) of 0.0175 Ω at VGS = 10 V. The P-channel unit offers a -40 V VDS, a maximum ID of 9.2 A at TC = 25 °C, and a typical RDS(on) of 0.021 Ω at VGS = -10 V. Both channels operate within a junction temperature range of -55 °C to +150 °C.
Feature Summary
- TrenchFET Power MOSFET technology
- Halogen-free construction according to IEC 61249-2-21
- 100% gate resistance and unclamped inductive switching (UIS) tested
Applications
- Notebook PCs
Procurement Notes
Verify the specific revision status of the datasheet (Document Number: 65922, Rev. B) before finalizing designs. Confirm that the T1 suffix corresponds to tape-and-reel packaging for automated assembly processes. Ensure compliance with RoHS Directive 2002/95/EC requirements matches the project specifications.
Selection Notes
Select this component when a compact dual MOSFET solution is required for low-voltage power management. The SO-8 package provides a balance between thermal dissipation and board space efficiency. Evaluate the total gate charge and switching times against the target operating frequency to ensure adequate drive capability and minimal switching losses.
Part Context
This part belongs to the Vishay Siliconix Si4564 family of complementary N- and P-channel MOSFETs. It utilizes the TrenchFET architecture to achieve low on-resistance in a standard narrow SOIC-8 footprint. The device integrates both channel types into a single package to simplify circuit design for applications requiring paired switching elements.
Replacement Considerations
Direct pin-compatible replacements must maintain the SO-8 package and matching electrical ratings. Verify that any substitute device supports the same 40 V breakdown voltage and comparable RDS(on) values. Ensure the alternative component also meets halogen-free and RoHS compliance standards.
