SI4622DY-T1-GE3

Overview

The Vishay Siliconix SI4622DY-T1-GE3 is a SkyFET monolithic power device integrating dual N-channel MOSFETs and Schottky diodes in an SO-8 package. Channel-1 features a drain-source voltage of 30 V, with on-resistance at 0.0160 Ω (VGS=10 V) and 0.0186 Ω (VGS=4.5 V). Channel-2 offers 30 V rating, with on-resistance at 0.0264 Ω (VGS=10 V) and 0.0290 Ω (VGS=4.5 V). The component operates within a junction temperature range of -55 °C to 150 °C.

Feature Summary

• SkyFET Monolithic TrenchFET Power MOSFET and Schottky Diode integration
• Halogen-free construction according to IEC 61249-2-21 definition
• 100% Rg and UIS tested for reliability

Applications

• Notebook Logic DC-DC
• Low Current DC-DC

Procurement Notes

Verify the specific ordering suffix against official documentation before procurement. The GE3 suffix indicates lead-free and halogen-free compliance, whereas other suffixes may differ. Confirm RoHS Directive 2002/95/EC compliance status directly from the manufacturer datasheet or authorized distributors to ensure regulatory alignment.

Selection Notes

Select this component based on the required channel-specific on-resistance thresholds and gate drive voltages. Evaluate thermal management requirements using the provided junction-to-foot and junction-to-ambient resistance ratings. Ensure the application current does not exceed the package-limited continuous drain current specifications under steady-state conditions.

Part Context

This part belongs to the Vishay Siliconix SkyFET family, combining power switching and rectification functions. It utilizes TrenchFET technology for optimized performance. The device is designed for surface mounting in compact electronic assemblies requiring efficient power conversion.

Replacement Considerations

Public confirmed substitute part numbers are not available in the verified source material.