SI4910DY-T1-E3

$1.19

Description：MOSFET 2N-CH 40V 7.6A 8SOIC
Series：TrenchFET®

SKU:bed68cd20076 Category: FET, MOSFET Arrays Brand: Vishay Siliconix

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 40V 7.6A 8SOIC
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：40V
Current - Continuous Drain (Id) @ 25°C：7.6A
Rds On (Max) @ Id, Vgs：27mOhm @ 6A, 10V
Vgs(th) (Max) @ Id：2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：32nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：855pF @ 20V
Power - Max：3.1W
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-SOIC (0.154", 3.90mm Width)
Supplier Device Package：8-SOIC
Grade：-
Qualification：-

Download product information

SI4910DY-T1-E3

Overview

The Vishay Siliconix Si4910DY-T1-E3 is a dual N-channel MOSFET featuring TrenchFET technology, housed in an SO-8 package. It supports a drain-source voltage of 40 V and offers low on-state resistance of 0.027 Ω at VGS = 10 V and 6 A. The device provides a continuous drain current of up to 7.6 A at TC = 25 °C and handles a pulsed drain current of 20 A. Operating junction temperature ranges from -55 °C to 150 °C, with maximum power dissipation rated at 3.1 W at TC = 25 °C.

Feature Summary

TrenchFET Power MOSFET technology for optimized performance
Dual N-channel configuration within a compact SO-8 package
Comprehensive avalanche testing including 100% Rg and UIS verification

Applications

CCFL Inverter circuits

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm lead-free status and halogen-free compliance. Confirm that the component matches the required thermal and electrical specifications for the target application before procurement.

Selection Notes

Evaluate the device based on the required operating voltage and current levels. Consider the thermal management requirements, as power dissipation decreases significantly with increasing case or ambient temperatures. Ensure gate drive voltages align with the specified thresholds for optimal on-resistance.

Part Context

This component belongs to the Vishay Siliconix Si49xx series of dual N-channel MOSFETs. These devices are designed for general-purpose switching applications requiring high efficiency and reliable performance in compact surface-mount configurations.