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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 6A 8SOIC
- Series：PowerTrench®
- Mfr：Fairchild Semiconductor
- Package：Bulk
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：6A (Ta)
- Rds On (Max) @ Id, Vgs：28mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：13nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds：830pF @ 15V
- Power - Max：900mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOIC
- Grade：-
- Qualification：-
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Overview
The SI4920DY is a dual N-channel power MOSFET manufactured by Fairchild Semiconductor. It features a 30V drain-source voltage (Vdss) and operates with a gate-source voltage (Vgs) of ±10V maximum. The device utilizes TrenchFET technology for optimized performance. It is housed in an 8-SOIC surface-mount package, designed for efficient thermal dissipation and compact circuit integration.
Feature Summary
- Dual N-channel configuration integrating two independent transistors within a single package
- TrenchFET power MOSFET technology for enhanced switching efficiency
- Logic-level operation capability for direct interface with standard logic drivers
Applications
- DC-DC converter circuits requiring dual channel control
- Motor driver interfaces for low-voltage applications
- Power management systems utilizing surface-mount assembly
Procurement Notes
Verify the manufacturer designation carefully, as the SI4920DY part number is historically associated with Vishay Siliconix. Confirm that the specific unit provided is indeed produced by Fairchild Semiconductor through official datasheets or component marking analysis to ensure authenticity and electrical specification compliance.
Selection Notes
Select this component when a dual N-channel topology is required within a limited footprint. The 30V rating suits low-voltage DC systems. Ensure the application demands the specific Rds(on) and gate charge characteristics defined by the Fairchild variant rather than generic equivalents.
Part Context
This component belongs to the family of dual power MOSFETs designed for space-constrained designs. While similar part numbers exist across multiple manufacturers, the specific electrical parameters and pinout compatibility depend strictly on the original equipment manufacturer's documentation.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the verified source material. Cross-referencing requires matching exact Vdss, Id, and package dimensions against alternative dual N-channel MOSFETs.
