SI4925BDY-T1-E3

SI4925BDY-T1-E3

$2.07
  • Description:MOSFET 2P-CH 30V 5.3A 8SOIC
  • Series:TrenchFET®

SKU:c1ab9160bfe3 Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

Product Detailed Parameters

  • Description:MOSFET 2P-CH 30V 5.3A 8SOIC
  • Series:TrenchFET®
  • Mfr:Vishay Siliconix
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 P-Channel (Dual)
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):30V
  • Current - Continuous Drain (Id) @ 25°C:5.3A
  • Rds On (Max) @ Id, Vgs:25mOhm @ 7.1A, 10V
  • Vgs(th) (Max) @ Id:3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:50nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:-
  • Power - Max:1.1W
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package:8-SOIC
  • Grade:-
  • Qualification:-

Download product information

SI4925BDY-T1-E3

Overview

The Vishay Siliconix SI4925BDY-T1-E3 is a dual P-channel MOSFET utilizing TrenchFET technology, housed in an SO-8 surface-mount package. It features a drain-source voltage (VDS) of -30 V and a continuous drain current (ID) of -7.1 A at 25 °C. The on-state resistance (RDS(on)) is specified at 0.025 Ω with a gate-source voltage (VGS) of -10 V. Key dynamic parameters include a total gate charge (Qg) of 50 nC, a turn-on delay time of 9 ns, and a fall time of 34 ns. The device supports an operating junction temperature range from -55 °C to +150 °C.

Feature Summary

  • Dual P-channel configuration within a single SO-8 package for space-efficient circuit design
  • TrenchFET power MOSFET architecture providing low on-state resistance
  • Halogen-free construction compliant with IEC 61249-2-21 standards

Applications

  • Load switches for notebook PCs
  • Load switches for desktop PCs
  • Load switches for game stations

Procurement Notes

Verify the specific ordering suffix against official documentation before procurement. The E3 suffix indicates lead-free status, while GE3 denotes both lead-free and halogen-free compliance. Confirm that the component meets RoHS Directive 2002/95/EC requirements for your specific manufacturing process. Ensure the selected variant matches the exact packaging and material specifications required by your bill of materials.

Selection Notes

Select this component when a compact dual P-channel solution is required for low-voltage switching applications. Evaluate the thermal resistance ratings, specifically the maximum junction-to-ambient resistance of 110 °C/W under steady-state conditions, to ensure adequate heat dissipation. Verify that the gate drive voltage levels are compatible with the specified threshold and on-resistance characteristics for optimal performance.

Part Context

This part belongs to the Si4925 family of dual P-channel MOSFETs manufactured by Vishay Siliconix. The product utilizes TrenchFET technology to achieve enhanced performance metrics compared to standard planar devices. The SO-8 package provides a standardized footprint suitable for automated surface-mount assembly processes commonly used in consumer electronics manufacturing.

Replacement Considerations

The datasheet lists Si4925DDY-T1-GE3 as a related alternative. Verify pinout compatibility and electrical parameter alignment before substitution. Ensure that any replacement maintains the required voltage and current ratings for the specific application environment.

SI4925BDY-T1-E3SI4925BDY-T1-E3
$2.07
Buy Now