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The Vishay Siliconix SI4925BDY-T1-E3 is a dual P-channel MOSFET utilizing TrenchFET technology, housed in an SO-8 surface-mount package. It features a drain-source voltage (VDS) of -30 V and a continuous drain current (ID) of -7.1 A at 25 °C. The on-state resistance (RDS(on)) is specified at 0.025 Ω with a gate-source voltage (VGS) of -10 V. Key dynamic parameters include a total gate charge (Qg) of 50 nC, a turn-on delay time of 9 ns, and a fall time of 34 ns. The device supports an operating junction temperature range from -55 °C to +150 °C.
Verify the specific ordering suffix against official documentation before procurement. The E3 suffix indicates lead-free status, while GE3 denotes both lead-free and halogen-free compliance. Confirm that the component meets RoHS Directive 2002/95/EC requirements for your specific manufacturing process. Ensure the selected variant matches the exact packaging and material specifications required by your bill of materials.
Select this component when a compact dual P-channel solution is required for low-voltage switching applications. Evaluate the thermal resistance ratings, specifically the maximum junction-to-ambient resistance of 110 °C/W under steady-state conditions, to ensure adequate heat dissipation. Verify that the gate drive voltage levels are compatible with the specified threshold and on-resistance characteristics for optimal performance.
This part belongs to the Si4925 family of dual P-channel MOSFETs manufactured by Vishay Siliconix. The product utilizes TrenchFET technology to achieve enhanced performance metrics compared to standard planar devices. The SO-8 package provides a standardized footprint suitable for automated surface-mount assembly processes commonly used in consumer electronics manufacturing.
The datasheet lists Si4925DDY-T1-GE3 as a related alternative. Verify pinout compatibility and electrical parameter alignment before substitution. Ensure that any replacement maintains the required voltage and current ratings for the specific application environment.