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Product Detailed Parameters
- Description：MOSFET 2P-CH 20V 4.9A 8SOIC
- Series：-
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：4.9A
- Rds On (Max) @ Id, Vgs：32mOhm @ 6.5A, 4.5V
- Vgs(th) (Max) @ Id：1.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：21nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：1.1W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOIC
- Grade：-
- Qualification：-
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Overview
The Vishay Siliconix SI4963BDY-T1-GE3 is a dual P-channel MOSFET utilizing TrenchFET technology, housed in an SO-8 surface-mount package. It features a drain-source voltage (VDS) rating of -20 V and a continuous drain current (ID) of -6.5 A at 25 °C. The device exhibits a maximum on-state resistance (RDS(on)) of 0.032 Ω at VGS = -4.5 V and -6.5 A, and 0.050 Ω at VGS = -2.5 V and -2 A. Total gate charge (Qg) is typically 21 nC at VDS = -10 V. Thermal performance includes a junction-to-ambient resistance (RthJA) of 91 °C/W under steady-state conditions. Operating junction temperature ranges from -55 °C to +150 °C.
Feature Summary
- Dual independent P-channel MOSFET configuration within a single compact SO-8 package
- TrenchFET power transistor technology for optimized on-resistance and switching performance
- Halogen-free construction compliant with IEC 61249-2-21 standards
Applications
- Low-side and high-side load switching circuits
- DC-DC converter output stages
- Power management modules requiring compact dual-channel solutions
Procurement Notes
Verify the specific ordering suffix against official Vishay documentation to confirm compliance requirements. The GE3 suffix indicates lead-free and halogen-free manufacturing. Confirm that the component meets RoHS Directive 2002/95/EC standards for your target market. Ensure the datasheet revision matches your design specifications before finalizing procurement orders.
Selection Notes
Select this component when a dual P-channel configuration is required in an SO-8 footprint. Evaluate the RDS(on) values at your specific gate drive voltages (-2.5 V or -4.5 V) to ensure adequate current handling. Consider the thermal resistance ratings and PCB copper area for heat dissipation during steady-state operation.
Part Context
This part belongs to the Vishay Siliconix SI4 series of TrenchFET MOSFETs. It is designed for general-purpose power switching applications where space efficiency and dual-channel functionality are prioritized. The SO-8 package allows for automated surface-mount assembly.
Replacement Considerations
The Si4963BDY-T1-E3 is the lead-free equivalent without the halogen-free designation. Verify pinout compatibility and electrical parameters when substituting other dual P-channel MOSFETs from different manufacturers.
