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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 10.8A 8SOIC
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：10.8A, 7.2A
- Rds On (Max) @ Id, Vgs：14.5mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：28nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：1080pF @ 15V
- Power - Max：3.1W, 2.5W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOIC
- Grade：-
- Qualification：-
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Overview
The SI4972DY-T1-GE3 is a dual N-channel Power MOSFET manufactured by Vishay Siliconix. It utilizes TrenchFET technology and is housed in an SOIC-8 surface-mount package. The device features a drain-source voltage (Vds) rating of 30 V and a continuous drain current (Id) of 25 A at 25°C case temperature. Key electrical parameters include a maximum on-resistance (Rds(on)) of 4.9 mΩ at Vgs = 10 V, a gate charge (Qg) of 54 nC, and an input capacitance (Ciss) of 2071 pF. The component supports a junction temperature range from -55°C to +150°C.
Feature Summary
- Dual N-channel configuration for synchronized switching applications
- TrenchFET power transistor technology for low on-resistance
- Surface-mount SOIC-8 packaging for compact board layouts
Applications
- DC-DC converter circuits
- Power management modules
- Load switching applications
Procurement Notes
Verify the specific suffix 'T1-GE3' against official Vishay documentation to confirm reel packaging and RoHS compliance status. Ensure the ordering part number matches the exact tape-and-reel specifications required for automated assembly processes. Cross-reference with the manufacturer's latest datasheet revision to validate any recent design or material changes.
Selection Notes
Select this component when a dual N-channel MOSFET with a 30 V rating and approximately 25 A continuous current capability is required. The 4.9 mΩ Rds(on) specification makes it suitable for low-loss power conversion designs. Verify that the SOIC-8 thermal performance meets the system's heat dissipation requirements under expected operating conditions.
Part Context
This part belongs to the Vishay Siliconix SI49xx series of dual MOSFETs. These devices are engineered for high-efficiency power switching in space-constrained environments. The SOIC-8 form factor allows for integration into standard surface-mount production lines while providing dual-channel functionality within a single footprint.
Replacement Considerations
Consult Vishay's official cross-reference tools for verified substitutes. Potential alternatives may include other dual N-channel MOSFETs with compatible 30 V ratings and similar SOIC-8 footprints, provided electrical parameters such as Rds(on) and Qg are equivalent or superior.
